BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES Low profile package Ideal for automated placement Glass passivated pellet chip junction Low reverse current High reverse voltage Ultra fast reverse recovery time Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS I 1.5 A F(AV) For use in high frequency rectification and freewheeling application in switching mode converters and inverters for V 1000 V RRM consumer, computer, automotive and telecommunication. I 30 A FSM I 5.0 A R MECHANICAL DATA t 75 ns rr Case: DO-214AC (SMA) V 1.7 V F Molding compound meets UL 94 V-0 flammability rating E 20 mJ R Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified T max. 150 C J Terminals: Matte tin plated leads, solderable per Package DO-214AC (SMA) J-STD-002 and JESD 22-B102 Diode variations Single die E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYG23M UNIT Device marking code BYG23M Maximum repetitive peak reverse voltage V 1000 V RRM Average forward current at T = 65 C I 1.5 A A F(AV) Peak forward surge current 10 ms single half sine-wave I 30 A FSM superimposed on rated load Pulse energy in avalanche mode, non repetitive E 20 mJ R (inductive load switch off) I = 1 A, T = 25 C (BR)R J Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 19-Feb-15 Document Number: 88962 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYG23M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BYG23M UNIT Minimum breakdown voltage I = 100 A V 1000 V R BR T = 25 C 1.7 J (1) Maximum instantaneous voltage I = 1.0 A V V F F T = 150 C 1.35 J T = 25 C 5 J Maximum reverse current V = V I A R RRM R T = 125 C 50 J Maximum reverse recovery time I = 0.5 A, I = 1.0 A, I = 0.25 A t 75 ns F R rr rr Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYG23M UNIT Typical thermal resistance, junction to case R 25 C/W JC (1) R 150 JA (2) Typical thermal resistance, junction to ambient R 125 C/W JA (3) R 100 JA Notes (1) 2 Mounted on epoxy-glass hard tissue, 17 mm 35 m Cu (2) 2 Mounted on epoxy-glass hard tissue, 50 mm 35 m Cu (3) 2 Mounted on Al-oxide-ceramic (Al O ), 50 mm 35 m Cu 2 3 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QANTITY DELIVERY MODE BYG23M-E3/TR 0.064 TR 1800 7 diameter plastic tape and reel BYG23M-E3/TR3 0.064 TR3 7500 13 diameter plastic tape and reel (1) BYG23MHE3/TR 0.064 TR 1800 7 diameter plastic tape and reel (1) BYG23MHE3/TR3 0.064 TR3 7500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 19-Feb-15 Document Number: 88962 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000