BZT52C4V3-HE3-08 Vishay

BZT52-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES Available Silicon planar Zener diodes The Zener voltages are graded according to the international E24 standard AEC-Q101 qualified available ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V click logo to get started DESIGN SUPPORT TOOLS Base P/N-E3 - RoHS-compliant, commercial grade Models Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V range nom. 2.4 to 75 V Z Test current I 2.5 5 mA ZT V specification Pulse current Z Circuit configuration Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZT52C2V4-E3-08 to BZT52C75-E3-08 BZT52B2V4-E3-08 to BZT52B75-E3-08 3000 (8 mm tape on 7 reel) 15 000/box BZT52C2V4-HE3-08 to BZT52C75-HE3-08 BZT52B2V4-HE3-08 to BZT52B75-HE3-08 BZT52-series BZT52C2V4-E3-18 to BZT52C75-E3-18 BZT52B2V4-E3-18 to BZT52B75-E3-18 10 000 (8 mm tape on 13 reel) 10 000/box BZT52C2V4-HE3-18 to BZT52C75-HE3-18 BZT52B2V4-HE3-18 to BZT52B75-HE3-18 PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY PACKAGE NAME WEIGHT SOLDERING CONDITIONS FLAMMABILITY RATING LEVEL MSL level 1 SOD-123 10.3 mg UL 94 V-0 260 C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Diode on ceramic substrate 0.7 mm P 500 mW tot 2 5 mm pad areas Power dissipation Diode on ceramic substrate 0.7 mm P 410 mW 2 tot 2.5 mm pad areas Zener current See table Electrical Characteristics Valid provided that electrodes are kept at Thermal resistance junction to ambient air R 300 K/W thJA ambient temperature Junction temperature T 150 C j T Storage temperature range -65 to +150 C stg Operating temperature range T -55 to +150 C op Rev. 1.9, 20-Feb-18 Document Number: 85760 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BZT52-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb ZENER VOLTAGE TEST REVERSE DYNAMIC TEMP. ADMISSABLE ZENER (1) (4) RANGE CURRENT VOLTAGE RESISTANCE COEFFICIENT CURRENT Z at Z at I at I at PART MARKING Z ZK Z Z V at I I I V at I Z ZT1 ZT1 ZT2 R R VZ I I T = 45 C T = 25 C NUMBER CODE ZT1 ZT2 amb amb -4 V mA V nA 10 /C mA MIN. NOM. MAX. BZT52C2V4 W1 2.2 2.4 2.6 5 1 - - 85 600 -9 to -4 - - BZT52C2V7 W2 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 to -4 113 134 BZT52C3V0 W3 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 to -3 98 118 BZT52C3V3 W4 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 to -3 92 109 BZT52C3V6 W5 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 to -3 85 100 BZT52C3V9 W6 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 to -3 77 92 BZT52C4V3 W7 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 to -1 71 84 BZT52C4V7 W8 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 to +2 64 76 BZT52C5V1 W9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52C5V6 WA 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52C6V2 WB 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52C6V8 WC 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52C7V5 WD 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52C8V2 WE 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52C9V1 WF 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52C10 WG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52C11 WH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52C12 WI 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52C13 WK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52C15 WL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52C16 WM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52C18 WN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52C20 WO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52C22 WP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52C24 WR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52C27 WS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52C30 WT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52C33 WU 31 33 35 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52C36 WW 34 36 38 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52C39 WX 37 39 41 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52C43 WY 40 43 46 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52C47 WZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C51 X1 48 51 54 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 (2) (3) (2) BZT52C56 X2 52 56 60 2.5 0.5 - - < 135 < 1000 typ. +10 -- (2) (3) (2) BZT52C62 X3 58 62 66 2.5 0.5 - - < 150 < 1000 typ. +10 -- (2) (3) (2) BZT52C68 X4 64 68 72 2.5 0.5 - - < 200 < 1000 typ. +10 -- (2) (3) (2) BZT52C75 X5 70 75 79 2.5 0.5 - - < 250 < 1500 typ. +10 -- Notes I = 5 mA, I = 1 mA ZT1 ZT2 (1) Measured with pulses t = 5 ms p (2) I = 2.5 mA ZT1 (3) I = 0.5 mA ZT2 (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.9, 20-Feb-18 Document Number: 85760 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000