CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES Top View A C Rated recurring peak voltage (repetitive) CNY64ST V = 1450 V IORM peak Thickness through insulation 3 mm Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking CNY65ST index: CTI 475 C E Moisture sensitivity level MSL4 V -Follow defined storage and soldering DE requirements 17187-6 Material categorization: for definitions of 17187-5 compliance please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS The CNY6XST, the high isolation voltage SMD version Solar and wind power diagnostic, monitoring, and optocouplers consist of a phototransistor optically coupled communication equipment to a gallium arsenide infrared-emitting diode in a 4 pin Welding equipment plastic package. High voltage motors The single components are mounted opposite one another, Switch-mode power supplies providing a distance between input and output for highest Line receiver safety requirements of > 3 mm. Computer peripheral interface VDE STANDARDS Microprocessor system interface Circuits for safe protective separation against electrical These couplers perform safety functions according to the shock according to safety class II (reinforced isolation): following equipment standards: - for appl. class I to IV at mains voltage 300 V DIN EN 60747-5-5 (VDE 0884-5) - for appl. class I to IV at mains voltage 600 V Optocoupler for electrical safety requirements - for appl. class I to III at mains voltage 1000 V IEC 60065 according to DIN EN 60747-5-5 (VDE 0884-5) Safety for mains-operated electronic and related AGENCY APPROVALS household apparatus DIN EN 60747-5-5 (VDE 0884-5) VDE 0160 Electronic equipment for electrical power installation UL1577, file no. E76222 VDE related features: -rated impulse voltage (transient overvoltage), V = 12 kV IOTM peak - isolation test voltage (partial discharge test voltage), V = 2.8 kV pd peak ORDERING INFORMATION CNY64ST CNY65ST C N Y 6 XXX S T PART NUMBER PACKAGE CTR BIN OPTION 10.16 mm 15.24 mm CTR (%) AGENCY CERTIFIED/PACKAGE 5 mA UL, VDE 50 to 300 50 to 150 80 to 240 100 to 300 SMD-4 HV, 400 mil high isolation distance CNY64ST CNY64AYST CNY64ABST CNY64AGRST SMD-4 HV, 600 mil high isolation distance CNY65ST CNY65AYST CNY65ABST CNY65AGRST Rev. 1.1, 26-Jun-14 Document Number: 82387 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 5V R Forward current I 75 mA F Forward surge current t 10 s I 1.5 A p FSM Power dissipation P 120 mW diss Junction temperature T 100 C j OUTPUT Collector emitter voltage V 32 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 130 mW diss Junction temperature T 100 C j COUPLER AC isolation test voltage CNY64AxxxST t = 1 min V 8.2 kV ISO RMS DC isolation test voltage CNY65AxxxST t = 1 s V 13.9 kV ISO Total power dissipation P 250 mW tot Ambient temperature range T -55 to +85 C amb Storage temperature range T -55 to +100 C stg Soldering temperature 2 mm from case, 10 s T 260 C sld Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V 1.32 1.6 V F F Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j OUTPUT Collector emitter voltage I = 1 mA V 32 V C CEO Emitter collector voltage I = 100 A V7V E ECO Collector emitter leakage current V = 20 V, I = 0 mA I 200 nA CE F CEO COUPLER Collector emitter saturation voltage I = 10 mA, I = 1 mA V 0.3 V F C CEsat Cut-off frequency V = 5 V, I = 10 mA, R = 100 f 110 kHz CE F L c Coupling capacitance f = 1 MHz C 0.3 pF k Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.1, 26-Jun-14 Document Number: 82387 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000
