CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES Package type: leaded Package form: T- Dimensions (in mm): 1.8 Peak wavelength: = 950 nm p High reliability Angle of half intensity: = 55 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors 94 8638 Package matches with detector BPW16N Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC DESCRIPTION CQY36N is an infrared, 950 nm emitting diode in GaAs APPLICATIONS technology molded in a miniature, clear plastic package Radiation source in near infrared range without lens. PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r CQY36N 1.5 55 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM CQY36N Bulk MOQ: 5000 pcs, 5000 pcs/bulk T- Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Surge forward current t 100 s I 2A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T - 25 to + 85 C amb Storage temperature range T - 25 to + 100 C stg Soldering temperature t 3 s T 245 C sd Thermal resistance junction/ambient leads not soldered R 450 K/W thJA Document Number: 81001 For technical questions, contact: emittertechsupport vishay.com www.vishay.com Rev. 1.8, 16-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 CQY36N Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 950 nm, GaAs 180 120 160 100 140 120 80 100 60 80 R = 450 K/W thJA R = 450 K/W thJA 40 60 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21320 21319 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA, t 20 ms V 1.3 1.6 V F p F Temperature coefficient of V I = 100 mA TK - 1.3 mV/K F F VF Breakdown voltage I = 100 A V5A R (BR) Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 50 pF R j Radiant intensity I = 50 mA, t 20 ms I 0.7 1.5 2.1 mW/sr F p e Radiant power I = 50 mA, t 20 ms 10 mW F p e Temperature coefficient of I = 50 mA TK - 0.8 %/K e F e Angle of half intensity 55 deg Peak wavelength I = 50 mA 950 nm F p Spectral bandwidth I = 50 mA 50 nm F I = 100 mA t 800 ns F r Rise time I = 1.5 A, t /T = 0.01, t 10 s t 400 ns F p p r Virtual source diameter d 1.2 mm BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 4 10 1.2 3 10 1.1 I = 10 mA F 2 10 1.0 1 0.9 10 0 0.8 10 -1 0.7 10 0 1 2 3 4 0 20 40 60 80 100 94 7990 T - Ambient Temperature (C) 94 7996 V - Forward Voltage (V) amb F Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Forward Voltage vs. Ambient Temperature www.vishay.com For technical questions, contact: emittertechsupport vishay.com Document Number: 81001 2 Rev. 1.8, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) P - Power Dissipation (mW) F V V - Relative Forward Voltage (V) F rel I - Forward Current (mA) F