X-On Electronics has gained recognition as a prominent supplier of QEC112 Infrared Emitters across the USA, India, Europe, Australia, and various other global locations. QEC112 Infrared Emitters are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Infrared Emitters, ensuring timely deliveries around the world.

QEC112 ON Semiconductor

QEC112 electronic component of ON Semiconductor
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Part No.QEC112
Manufacturer: ON Semiconductor
Category: Infrared Emitters
Description: Infrared Emitters LED.LOW BIN QEC113
Datasheet: QEC112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4108 ea
Line Total: USD 0.41 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4108
10 : USD 0.3292
100 : USD 0.2703
1000 : USD 0.2277
2000 : USD 0.1966
10000 : USD 0.1717

   
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We are delighted to provide the QEC112 from our Infrared Emitters category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QEC112 and other electronic components in the Infrared Emitters category and beyond.

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QEC112, QEC113 Plastic Infrared Light Emitting Diode August 2008 QEC112, QEC113 Plastic Infrared Light Emitting Diode Features Description PACKAGE DIMENSIONS = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. Chip material = GaAs Package type: T-1 (3 mm) Can be used with QSCXXX Photosensor Narrow Emission Angle, 8 at 80% intensity High Output Power Package material and color: Clear, peach tinted plastic Package Dimensions 0.116 (2.95) REFERENCE SURFACE 0.193 (4.90) 0.052 (1.32) 0.032 (0.082) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM Schematic ANODE 0.155 (3.94) CATHODE 0.018 (0.46) SQ. (2X) Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is 0.010 (.25) on all non-nominal dimensions unless otherwise specified. 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com QEC112, QEC113 Rev. 1.0.2QEC112, QEC113 Plastic Infrared Light Emitting Diode Absolute Maximum Ratings (T = 25C unless otherwise specified) A Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Rating Units T Operating Temperature -40 to +100 C OPR T Storage Temperature -40 to +100 C STG (2,3,4) T Soldering Temperature (Iron) 240 for 5 sec C SOL-I (2,3) Soldering Temperature (Flow) 260 for 10 sec C T SOL-F I Continuous Forward Current 50 mA F V Reverse Voltage 5 V R (1) Power Dissipation 100 mW P D Notes: 1. Derate power dissipation linearly 1.33mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16 (1.6mm) minimum from housing. (T = 25C) Electrical / Optical Characteristics A Symbol Parameter Test Conditions Min. Typ. Max. Units Peak Emission Wavelength I = 100mA 940 nm PE F Temperature Coefcient 0.3 nm / C TC 1 2 /2 Emission Angle I = 100mA 18 F Forward Voltage I = 100mA, tp = 20ms 1.5 V V F F Temperature Coefcient -2 mV / C TC VF I Reverse Current V = 5V 10 A R R Radiant Intensity QEC112 I = 100mA, tp = 20ms 6 30 mW/sr I E F Radiant Intensity QEC113 I = 100mA, tp = 20ms 14 40 mW/sr I E F TC Temperature Coefcient -0.7 % / C IE Rise Time I = 100mA 800 ns t r F Fall Time 800 ns t f C Junction Capacitance V = 0V 14 pF j R 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com QEC112, QEC113 Rev. 1.0.2 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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