X-On Electronics has gained recognition as a prominent supplier of Q65110A2467 Infrared Emitters across the USA, India, Europe, Australia, and various other global locations. Q65110A2467 Infrared Emitters are a product manufactured by OSRAM. We provide cost-effective solutions for Infrared Emitters, ensuring timely deliveries around the world.

Q65110A2467 OSRAM

Q65110A2467 electronic component of OSRAM
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Part No.Q65110A2467
Manufacturer: OSRAM
Category: Infrared Emitters
Description: LED IrLED 860nm 2-Pin Chip LED
Datasheet: Q65110A2467 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.4143 ea
Line Total: USD 828.6 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.4143

   
Manufacturer
Product Category
RoHS - XON
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Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
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Minimum Operating Temperature
Maximum Operating Temperature
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We are delighted to provide the Q65110A2467 from our Infrared Emitters category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Q65110A2467 and other electronic components in the Infrared Emitters category and beyond.

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2014-01-15 High Power Infrared Emitter (850 nm) IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 / gem: OS-PCN-2009-021-A2 SFH 4255 Features: Besondere Merkmale: High Power Infrared LED Infrarot LED mit sehr hoher Ausgangsleistung Short switching times Kurze Schaltzeiten Applications Anwendungen Infrared Illumination for cameras Infrarotbeleuchtung fr Kameras IR data transmission IR Datenbertragung Sensor technology Sensorik Notes Hinweise Depending on the mode of operation, these devices Je nach Betriebsart emittieren diese Bauteile emit highly concentrated non visible infrared light hochkonzentrierte, nicht sichtbare which can be hazardous to the human eye. Products Infrarot-Strahlung, die gefhrlich fr das which incorporate these devices have to follow the menschliche Auge sein kann. Produkte, die diese safety precautions given in IEC 60825-1 and IEC Bauteile enthalten, mssen gem den 62471. Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Ordering Information Bestellinformation Type: Radiant Intensity Ordering Code Typ: Strahlstrke Bestellnummer I = 100 mA, t = 20 ms F p I mW/sr e SFH 4255 20 ( 10) Q65110A2467 Note: Measured at a solid angle of = 0.01 sr Anm.: Gemessen bei einem Raumwinkel = 0.01 sr 2014-01-15 1Version 1.1 / gem: OS-PCN-2009-021-A2 SFH 4255 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operation and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 5V R Sperrspannung Forward current I 100 mA F Durchlassstrom Surge current I 1A FSM Stostrom (t = 200 s, D = 0) p Total power dissipation P 180 mW tot Verlustleistung ESD withstand voltage V 2kV ESD ESD Festigkeit (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 11 Thermal resistance junction - ambient R 450 K / W thJA Wrmewiderstand Sperrschicht - Umgebung 1) Seite 11 Thermal resistance junction - soldering point R 200 K / W thJS 2) page 11 2) Seite 11 Wmewiderstand Sperrschicht - Ltstelle Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Emission wavelength (typ) 860 nm peak Zentrale Emissionswellenlnge (I = 100 mA, t = 20 ms) F p Centroid Wavelength (typ) 850 nm centroid Schwerpunktwellenlnge der Strahlung (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max Spektrale Bandbreite bei 50% von I max (I = 100 mA, t = 20 ms) F p 2014-01-15 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania
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