2016-08-10 High Power Infrared Emitter (850 nm) Version 1.6 SFH 4056 Features: Very small package: (LxWxH) 3.2 mm x 1.6 mm x 1 mm High optical total power UL version available ( ordering code & test conditions on request) Applications Miniature photointerrupters Mobile devices Proximity sensor For control and drive circuits Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Irradiance Radiant intensity Ordering Code 2 E mW/cm I mW/sr e e, typ I = 70 mA, t = 20 ms I =70 mA, t =20 ms F p F p SFH 4056 6 ( 2.5) 35 Q65111A2992 SFH 4056-NP 2.5 ... 8 Q65111A9688 Note: I measured with a detector (11.3 mm diameter) in 100 mm distance ( = 0.01 sr) to the device surface e E measured in the near field with a detector (7.2 mm diameter) in 20 mm distance ( = 0.1 sr) to the device e surface 2016-08-10 1Version 1.6 SFH 4056 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T T -40 ... 85 C op stg Reverse voltage V 5 V R Forward current I 70 mA F Surge current I 0.7 A FSM (t 300 s, D = 0) p Power consumption P 140 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 13 Thermal resistance junction - ambient R 540 K / W thJA Thermal resistance junction - soldering point R 360 K / W thJS 2) page 13 Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 860 nm peak (I = 70 mA, t = 20 ms) F p Centroid wavelength (typ) 850 nm centroid (I = 70 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max (I = 70 mA, t = 20 ms) F p Half angle (typ) 22 Dimensions of active chip area (typ) L x W 0.2 x 0.2 mm x mm Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 12 ns e e max r f (I = 70 mA, R = 50 ) F L Forward voltage (typ (max)) V 1.6 ( 2) V F (I = 70 mA, t = 20 ms) F p Forward voltage (typ (max)) V 2.4 V F (I = 500 mA, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 40 mW e (I =70 mA, t =20 ms) F p Radiant intensity I 16 mW/sr e, min (I =70 mA, t =20 ms) I 35 mW/sr F p e, typ 2016-08-10 2