X-On Electronics has gained recognition as a prominent supplier of Q65110A2975 across the USA, India, Europe, Australia, and various other global locations. Q65110A2975 are a product manufactured by OSRAM. We provide cost-effective solutions for Q65110A2975, ensuring timely deliveries around the world.

Q65110A2975 OSRAM

Q65110A2975 electronic component of OSRAM
Q65110A2975 OSRAM
Q65110A2975 Unclassified
Q65110A2975

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See Product Specifications
Part No. Q65110A2975
Manufacturer: OSRAM
Category: Unclassified
Description: LED IrLED 860nm 4-Pin SMD
Datasheet: Q65110A2975 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
79: USD 0.7479 ea
Line Total: USD 59.08 
Availability - 0
MOQ: 79  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 102
Multiples : 1
102 : USD 1.1067

0
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 79
Multiples : 1
79 : USD 0.7479
100 : USD 0.6869

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Illumination Color
Package / Case
Packaging
Power Rating
Wavelength
Beam Angle
Brand
Viewing Angle
Fall Time
If - Forward Current
Maximum Operating Temperature
Minimum Operating Temperature
Radiant Intensity
Rise Time
Factory Pack Quantity :
Vf - Forward Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the Q65110A2975 from our OSRAM manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Q65110A2975 and other electronic components in the OSRAM manufacturer and beyond.

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2014-01-15 High Power Infrared Emitter (850 nm) IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 acc. to OS-PCN-2009-021-A2 SFH 4258 Features: Besondere Merkmale: High Power Infrared LED Infrarot LED mit hoher Ausgangsleistung Half angle: 15 Halbwinkel: 15 High forward current allowed at high temperature Hohe Bestromung bei hohen Temperaturen mglich Short switching times Kurze Schaltzeiten Applications Anwendungen Infrared Illumination for cameras Infrarotbeleuchtung fr Kameras IR data transmission IR Datenbertragung Sensor technology Sensorik Notes Hinweise Depending on the mode of operation, these devices Je nach Betriebsart emittieren diese Bauteile emit highly concentrated non visible infrared light hochkonzentrierte, nicht sichtbare which can be hazardous to the human eye. Products Infrarot-Strahlung, die gefhrlich fr das which incorporate these devices have to follow the menschliche Auge sein kann. Produkte, die diese safety precautions given in IEC 60825-1 and IEC Bauteile enthalten, mssen gem den 62471. Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. 2014-01-15 1Version 1.1 acc. to OS-PCN-2009-021-A2 SFH 4258 Ordering Information Bestellinformation Type: Radiant Intensity Ordering Code Typ: Strahlstrke Bestellnummer I = 100 mA, t = 20 ms F p I mW/sr e SFH 4258 110 ( 50) Q65110A2975 Note: Measured at a solid angle of = 0.01 sr Anm.: Gemessen bei einem Raumwinkel = 0.01 sr Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operation and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 5V R Sperrspannung Forward current I 100 mA F Durchlassstrom Surge current I 1A FSM Stostrom (t 100 s, D = 0) p Total power dissipation P 180 mW tot Verlustleistung ESD withstand voltage V 2kV ESD ESD Festigkeit (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 13 Thermal resistance junction - ambient R 300 K / W thJA Wrmewiderstand Sperrschicht - Umgebung 1) Seite 13 Thermal resistance junction - soldering point R 140 K / W thJS 2) page 13 2) Seite 13 Wmewiderstand Sperrschicht - Ltstelle 2014-01-15 2

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