DG2012 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG2012 is a single-pole/double-throw monolithic CMOS Low Voltage Operation (1.8 V to 5.5 V) analog switch designed for high performance switching of Pb-free Low On-Resistance - r : 1 Typ. DS(on) Available analog signals. Combining low power, high speed Fast Switching - t : 17 ns, t : 13 ns ON OFF (t : 17 ns, t : 13 ns), low on-resistance (r : 1 ) and RoHS* ON OFF DS(on) Low Leakage COMPLIANT small physical size (SC70), the DG2012 is ideal for portable TTL/CMOS Compatible and battery powered applications requiring high 6-Pin SC-70 Package performance and efficient use of board space. The DG2012 is built on Vishay Siliconixs low voltage BENEFITS submicron CMOS process. An epitaxial layer prevents Reduced Power Consumption latchup. Break-before -make is guaranteed for DG2012. Simple Logic Interface High Accuracy Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. Reduce Board Space APPLICATIONS Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE Logic NC NO SC-70 0ON OFF IN NO (Source ) 1OFF ON 1 6 1 V+ 2 5 COM GND NC (Source ) 3 4 2 ORDERING INFORMATION Top View Temp Range Package Part Number DG2012DL-T1 Device Marking: E7xx - 40 to 85 C SC70-6 DG2012DL-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72176 www.vishay.com S-70852-Rev. B, 30-Apr-07 1DG2012 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Referenced V+ to GND - 0.3 to + 6 V a - 0.3 to (V+ + 0.3) IN, COM, NC, NO Continuous Current (NO, NC and COM Pins) 100 mA Peak Current (Pulsed at 1 ms, 10 % duty cycle) 300 Storage Temperature (D Suffix) - 65 to 150 C b c 250 mW Power Dissipation (Packages) 6-Pin SO70 Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/C above 70 C. SPECIFICATIONS (V+ = 2.0 V) Test Conditions Limits Otherwise Unless Specified - 40 to 85 C e a b c b V+ = 2.0 V, 10 %, V = 0.4 or 1.6 V Parameter Symbol IN Temp Min Typ Max Unit Analog Switch V , V NO NC d Full 0 V+ V Analog Signal Range V COM V+ = 1.8 V, V = 0.2 V/0.9 V Room COM 2.7 5.3 On-Resistance r ON d I , I = 10 mA 2.7 5.3 Full NO NC r d ON r Flatness Room 3 ON Flatness V+ = 1.8 V, V = 0 to V+, I , I = 10 mA COM NO NC d r r Match Room 0.25 ON ON I Room - 0.5 0.5 NO(off) I Full - 5.0 5.0 NC(off) V+ = 2.2 V f Switch Off Leakage Current V , V = 0.5 V/1.5 V, V = 1.5 V/0.5 V NO NC COM Room - 0.5 0.5 I nA COM(off) d - 5.0 5.0 Full Room - 0.5 0.5 f I V+ = 2.2 V, V , V = V = 0.5 V/1.5 V Channel-On Leakage Current COM(on) NO NC COM d - 5.0 5.0 Full Digital Control V Input High Voltage Full 1.6 INH V V Input Low Voltage Full 0.4 INL d C Full 3 pF Input Capacitance in f I or I V = 0 or V+ Full - 1 1 A Input Current INL INH IN Dynamic Characteristics Room 43 63 d t Turn-On Time ON d 65 Full V or V = 1.5 V, R = 300 , C = 35 pF NO NC L L Room 23 45 ns d t Turn-Off Time OFF Figures 1 and 2 d 46 Full d t Room 2 Break-Before-Make Time d d Q C = 1 nF, V = 0 V, R = 0 , Figure 3 Room 7 pC Charge Injection INJ L GEN GEN d OIRR Room - 63 Off-Isolation R = 50 , C = 5 pF, f = 1 MHz dB L L d X Room - 64 Crosstalk TALK C NO(off) d N , N Off Capacitance Room 22 O C C NC(off) V = 0 or V+, f = 1 MHz pF IN d C Room 58 Channel-On Capacitance ON www.vishay.com Document Number: 72176 2 S-70852-Rev. B, 30-Apr-07