DG2012E www.vishay.com Vishay Siliconix Powered-off Protection, 1 , 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) DESCRIPTION FEATURES The DG2012E is a high performance single-pole, Low switch on-resistance (1 ) double-throw (SPDT) analog switch designed for 1.8 V to 1.65 V to 5.5 V single supply operation Available 5.5 V operation with a single power rail. Isolation in powered-off mode Fabricated with high density CMOS technology, the device Available Control logic inputs can go over V+ achieves low on resistance of 1 at a 5 V power supply, low power consumption, and fast switching speeds. Low charge injection (5 pC) The DG2012E can handle both analog and digital signals Low total harmonic distortion and permits signals with amplitudes of up to V+ to be Break before make switching transmitted in either direction. Its control logic inputs can go Latch-up performance exceeds 300 mA per JESD 78 over V+ up to 5.5 V. It features break before make switching performance. Its -3 dB bandwidth is typically 160 MHz. ESD tested A powered-off protection circuit is built into the switch to - 7000 V human body model (JS-001) prevent an abnormal current flow from COM pin to V+ during - 1000 V charge device model (JS-002) the power-down condition. Each output pin can withstand greater than 7 kV (human body model). Material categorization: for definitions of compliance Operation temperature is specified from -40 C to +85 C. please see www.vishay.com/doc 99912 The DG2012E is available in SC-70-6L package. Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS Smartphones and tablets Consumer and computing Portable instrumentation Medical equipment FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION SC-70 IN 1 6 NO (source ) 1 H2XXX V+ COM 2 5 Pin 1 GND 3 4 NC (source ) 2 Device marking: H2XXX XXX = date / lot traceability code Top view Device marking: H2 TRUTH TABLE ORDERING INFORMATION LOGIC NC NO TEMP. RANGE PACKAGE PART NUMBER 0On Off -40 C to +85 C SC-70-6 DG2012EDL-T1-GE3 1Off On S18-0425-Rev. B, 23-Apr-18 Document Number: 75834 1 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000DG2012E www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT UNIT V+, COM, NC, NO, IN reference to GND -0.3 to 6 V Continuous current (NO, NC, and COM pins) 100 mA Peak current (pulsed at 1 ms, 10 % duty cycle) 300 Storage temperature (D suffix) -65 to +150 C a b Power dissipation (packages) 6-pin SO-70 250 mW ESD / HBM JS-001 7000 V ESD / CDM JS-002 1000 Latch up Per JESD78 with 1.5 x voltage clamp 300 mA Notes a. All leads welded or soldered to PC board b. Derate 3.1 mW/C above 70 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 5 V) LIMITS TEST CONDITIONS a -40 C to +85 C PARAMETER SYMBOL UNLESS OTHERWISE SPECIFIED TEMP. UNIT e b c b V+ = 5 V, 10 %, V = 0.8 V or 2.4 V IN MIN. TYP. MAX. Analog Switch V , V NO NC d Analog signal range Full 0 - V+ V V COM Room - 1 1.6 V+ = 4.5 V, On-resistance R ON d V = 0.5 V / 2.5 V, I , I = 10 mA COM NO NC Full -2 R d ON R flatness Room - 0.2 0.5 ON V+ = 4.5 V, flatness V = 0 V to V+, I , I = 10 mA COM NO NC d R match R Room - - 0.3 ON ON Room -5 - 5 I NO(off) V+ = 5 V I NC(off) Full -20 - 20 f Switch off leakage current V , V = 0.5 V / 4.5 V, NO NC Room -5 - 5 V = 4.5 V / 0.5 V COM I nA COM(off) d Full -20 - 20 Room -5 - 5 V+ = 5 V, f Channel-on leakage current I COM(on) V , V = V = 0.5 V / 4.5 V d NO NC COM Full -20 - 20 d Power down leakage I V+ = 0 V, V = 4.5 V, V = GND Full -1 - 1 A COM(PD) COM IN Digital Control Input high voltage V Full 2.4 - - INH V Input low voltage V Full - - 0.8 INL d Input capacitance C Full - 3 - pF IN f Input current I or I V = 0 V or V+ Full -1 - 1 A INL INH IN Dynamic Characteristics Room - 15 32 d Turn-on time t ON d Full -- 35 V or V = 3 V, NO NC R = 300 , C = 35 pF L L Room - 7 28 ns d Turn-off time t OFF d Full -- 30 d Break-before-make time t Room 1 5 - d d Charge injection Q C = 1 nF, V = 0 V, R = 0 Room - 8 - pC INJ L GEN GEN d Off-isolation OIRR Room - -63 - R = 50 , C = 5 pF, f = 1 MHz dB L L d Crosstalk X Room - -63 - TALK C NO(off) d N , N off capacitance Room - 16 - O C C NC(off) V = 0 V or V+, f = 1 MHz pF IN d Channel-on capacitance C Room - 52 - ON Power Supply Power supply current I+ V = 0 V or V+ Full - 0.0003 1 A IN S18-0425-Rev. B, 23-Apr-18 Document Number: 75834 2 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000