DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES 22 V supply voltage rating The DG211B, DG212B analog switches are highly improved TTL and CMOS compatible logic versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix proprietary silicon Low on-resistance - R : 50 DS(on) gate CMOS process, resulting in lower on-resistance, lower Low leakage - I : 20 pA D(on) leakage, higher speed, and lower power consumption. Single supply operation possible Extended temperature range These quad single-pole single-throw switches are designed Fast switching - t : 120 ns for a wide variety of applications in telecommunications, ON instrumentation, process control, computer peripherals, etc. Low charge injection - Q: 1 pC An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B BENEFITS can handle up to 22 V, and have an improved continuous Wide analog signal range current rating of 30 mA. An epitaxial layer prevents latchup. Simple logic interface Higher accuracy All devices feature true bi-directional performance in the on Minimum transients condition, and will block signals to the supply levels in the off condition. Reduced power consumption Superior to DG211, DG212 The DG211B is a normally closed switch and the DG212B is Space savings (TSSOP) a normally open switch. (see Truth Table.) APPLICATIONS Industrial instrumentation Test equipment Communications systems Disk drives Computer peripherals Portable instruments Sample-and-hold circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG211B Dual-In-Line, SOIC and TSSOP IN IN 1 2 1 16 TRUTH TABLE D D 1 2 2 15 Logic DG211B DG212B S S 1 2 0 ON OFF 3 14 1OFF ON V- V+ 4 13 Logic 0 0.8 V GND V L 5 12 Logic 1 2.4 V S S 4 3 6 11 D D 4 3 7 10 IN IN 4 3 8 9 Top View * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70040 www.vishay.com S11-0179-Rev. J, 07-Feb-11 1DG211B, DG212B Vishay Siliconix ORDERING INFORMATION Temp. Range Package Standard Part Number Lead (Pb)-free Part Number DG211BDJ DG211BDJ-E3 16-Pin Plastic DIP DG212BDJ DG212BDJ-E3 DG211BDY DG211BDY-E3 DG211BDY-T1 DG211BDY-T1-E3 16-Pin Narrow SOIC DG212BDY DG212BDY-E3 - 40 C to 85 C DG212BDY-T1 DG212BDY-T1-E3 DG211BDQ DG211BDQ-E3 DG211BDQ-T1 DG211BDQ-T1-E3 16-Pin TSSOP DG212BDQ DG212BDQ-E3 DG212BDQ-T1 DG212BDQ-T1-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Limit Unit Voltages Referenced, V+ to V- 44 GND 25 V (V-) - 2 to (V+) + 2 a Digital Inputs , V , V S D or 30 mA, whichever occurs first Current (Any terminal) 30 mA Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 Storage Temperature - 65 to 125 C c 470 16-Pin Plastic DIP b mW Power Dissipation (Package) d 640 16-Pin Narrow SOIC and TSSOP Notes: a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. X X X b. All leads welded or soldered to PC board. c. Derate 6.5 mW/C above 75 C. d. Derate 7.6 mW/C above 75 C. SCHEMATIC DIAGRAM (Typical Channel) V+ S X V L Level V- Shift/ Drive V+ IN X D X GND V- Figure 1. www.vishay.com Document Number: 70040 2 S11-0179-Rev. J, 07-Feb-11