DG211B, DG212B
Vishay Siliconix
Improved Quad CMOS Analog Switches
DESCRIPTION
FEATURES
22 V supply voltage rating
The DG211B, DG212B analog switches are highly improved
TTL and CMOS compatible logic
versions of the industry-standard DG211, DG212. These
devices are fabricated in Vishay Siliconix proprietary silicon
Low on-resistance - R : 50
DS(on)
gate CMOS process, resulting in lower on-resistance, lower
Low leakage - I : 20 pA
D(on)
leakage, higher speed, and lower power consumption.
Single supply operation possible
Extended temperature range
These quad single-pole single-throw switches are designed
Fast switching - t : 120 ns
for a wide variety of applications in telecommunications,
ON
instrumentation, process control, computer peripherals, etc.
Low charge injection - Q: 1 pC
An improved charge injection compensation design
minimizes switching transients. The DG211B and DG212B
BENEFITS
can handle up to 22 V, and have an improved continuous
Wide analog signal range
current rating of 30 mA. An epitaxial layer prevents latchup.
Simple logic interface
Higher accuracy
All devices feature true bi-directional performance in the on
Minimum transients
condition, and will block signals to the supply levels in the off
condition.
Reduced power consumption
Superior to DG211, DG212
The DG211B is a normally closed switch and the DG212B is
Space savings (TSSOP)
a normally open switch. (see Truth Table.)
APPLICATIONS
Industrial instrumentation
Test equipment
Communications systems
Disk drives
Computer peripherals
Portable instruments
Sample-and-hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG211B
Dual-In-Line, SOIC and TSSOP
IN IN
1 2
1 16
TRUTH TABLE
D D
1 2
2 15
Logic DG211B DG212B
S S
1 2 0 ON OFF
3 14
1OFF ON
V- V+
4 13
Logic 0 0.8 V
GND V
L
5 12
Logic 1 2.4 V
S S
4 3
6 11
D D
4 3
7 10
IN IN
4 3
8 9
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70040 www.vishay.com
S11-0179-Rev. J, 07-Feb-11 1DG211B, DG212B
Vishay Siliconix
ORDERING INFORMATION
Temp. Range Package Standard Part Number Lead (Pb)-free Part Number
DG211BDJ DG211BDJ-E3
16-Pin Plastic DIP
DG212BDJ DG212BDJ-E3
DG211BDY DG211BDY-E3
DG211BDY-T1 DG211BDY-T1-E3
16-Pin Narrow SOIC
DG212BDY DG212BDY-E3
- 40 C to 85 C
DG212BDY-T1 DG212BDY-T1-E3
DG211BDQ DG211BDQ-E3
DG211BDQ-T1 DG211BDQ-T1-E3
16-Pin TSSOP
DG212BDQ DG212BDQ-E3
DG212BDQ-T1 DG212BDQ-T1-E3
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
A
Parameter Limit Unit
Voltages Referenced, V+ to V- 44
GND 25
V
(V-) - 2 to (V+) + 2
a
Digital Inputs , V , V
S D
or 30 mA, whichever occurs first
Current (Any terminal) 30
mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature - 65 to 125 C
c
470
16-Pin Plastic DIP
b
mW
Power Dissipation (Package)
d
640
16-Pin Narrow SOIC and TSSOP
Notes:
a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
X X X
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/C above 75 C.
d. Derate 7.6 mW/C above 75 C.
SCHEMATIC DIAGRAM (Typical Channel)
V+
S
X
V
L
Level V-
Shift/
Drive
V+
IN
X
D
X
GND
V-
Figure 1.
www.vishay.com Document Number: 70040
2 S11-0179-Rev. J, 07-Feb-11