DG2511, DG2512, DG2513 Vishay Siliconix Low-Voltage, Low R , Single Analog Switch ON In miniQFN-6 Package DESCRIPTION FEATURES The DG2511, DG2512, DG2513 are low on-resistance, Low voltage operation (1.8 V to 5.5 V) single-pole/double-throw or single-pole/single-throw Low on-resistance - R : 1.3 at 2.7 V ON monolithic CMOS analog switch. It is designed for low Low charge injection RoHS voltage applications. The DG2511, DG2512, DG2513 are COMPLIANT Latch-up current > 300 mA (JESD78A) ideal for portable and battery powered equipment, requiring miniQFN-6 package (1.2 x 1 mm) high performance and efficient use of board space. In Material categorization: For definitions of compliance additional to the low on-resistance (1.3 at 2.7 V). please see www.vishay.com/doc 99912 The DG2511 is an SPDT and the DG2512, DG2513 are SPST. The switch conducts equally well in both directions BENEFITS when on, and blocks up to the power supply level when off. Reduced power consumption The DG2511, DG2512, DG2513 are built on Vishay Simple logic interface Siliconixs low voltage JI5L process. An epitaxial layer High accuracy prevents latchup. Reduce board space Guaranteed 2 V operation Break-before-make is guaranteed. The DG2511, DG2512, DG2513 represents a breakthrough APPLICATIONS in packaging development for analog switching products. Cellular phones The miniQFN-6 package (1.2 x 1 mm). Communication systems As a committed partner to the community and the Portable test equipment environment, Vishay Siliconix manufactures this product with Battery operated systems the lead (Pb)-free device terminations. For analog switching Sample and hold circuits products manufactured with NiPdAu device terminations, the ADC and DAC applications lead (Pb)-free-E4 suffix is being used as a designator. Low voltage data acquisition systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2511 DG2512 DG2513 miniQFN-6 miniQFN-6 miniQFN-6 NO 1 6 IN NC 1 6 IN NO 1 6 IN GND 2 5 GND 2 5 GND 2 5 V+ V+ V+ NC 3 4 COM NC 3 4 COM NO 3 4 COM Top View Top View Top View TRUTH TABLE Logic NC NO Ax 0 On Off Pin 1 1Off On Device Marking: Ax for DG2511 Bx for DG2512 Cx for DG2513 COMMERCIAL ORDERING INFORMATION x = Date/Lot Traceability Code Temp Range Package Part Number Note: Pin 1 has long lead miniQFN-6 DG2511DN-T1-E4 - 40 C to 85 C Lead (Pb)-free DG2512DN-T1-E4 with Tape and Reel DG2513DN-T1-E4 Document Number: 74454 www.vishay.com For more information please contact: analogswitchtechsuoort vishay.com S12-1989Rev. D, 20-Aug-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000DG2511, DG2512, DG2513 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Reference V+ to GND - 0.3 to + 6 V a - 0.3 to (V+ + 0.3) IN, COM, NC, NO Continuous Current (NO, NC, COM pins) 150 mA Peak Current (Pulsed at 1 ms, 10 % duty cycle) 300 Storage Temperature D Suffix - 65 to 150 C b c 160 mW Power Dissipation (Packages) miniQFN-6 Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2 mW/C above 70 C. SPECIFICATIONS (V+ = 3 V) Test Conditions Limits Otherwise Unless Specified - 40 C to 85 C e b c b a V+ = 3 V, 10 %,V = 0.4 V or 2 V Parameter Symbol IN Temp. Min. Typ. Max. Unit Analog Switch V , V , NO NC d Full 0 V+ V Analog Signal Range V COM Room 1.4 1.7 R On-Resistance ON Full 1.9 V+ = 2.7 V, V = 0.5 V/1.5 V COM R Match R Room 0.15 ON ON I , I = 100 mA NO NC R ON R Flatness Room 0.3 0.4 ON Flatness I Room - 2 2 NO(off) I V+ = 3.3 V, Full - 20 20 NC(off) f Switch Off Leakage Current V , V = 1 V/3 V, V = 3 V/1 V NO NC COM Room - 2 2 nA I COM(off) Full - 20 20 Room - 2 2 f I V+ = 3.3 V, V , V = V = 1 V/3 V Channel-On Leakage Current COM(on) NO NC COM Full - 20 20 Digital Control Input High Voltage V Full 1.6 INH V V Input Low Voltage Full 0.4 INL Input Capacitance C Full 4 pF in I or I V = 0 or V+ Input Current Full 1 1 A INL INH IN Dynamic Characteristics Room 18 43 Turn-On Time t ON Full 49 V+ = 2.7 V, V or V = 1.5 V, NO NC Room 732 ns Turn-Off Time t R = 50 , C = 35 pF OFF L L Full 34 t Break-Before-Make Time Room 1 12 BBM d Q C = 1 nF, V = 0 V, R = 0 Room 3 pC Charge Injection INJ L GEN GEN d OIRR Room - 58 Off-Isolation R = 50 , C = 5 pF, f = 1 MHz dB L L d X Room - 64 Crosstalk TALK C NO(off) d N , N Off Capacitance Room 21 O C C V = 0 or V+, f = 1 MHz pF NC(off) IN d C Room 61 Channel-On Capacitance ON Power Supply Power Supply Range V+ 1.8 5.5 V V = 0 or V+ Power Supply Current I+ 0.01 1 A IN www.vishay.com Document Number: 74454 For more information please contact: analogswitchtechsuoort vishay.com 2 S12-1989Rev. D, 20-Aug-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000