DG2517, DG2518 Vishay Siliconix 3-, High Bandwidth, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2517, DG2518 are low-voltage dual single-pole/ 1.8 V to 5.5 V single supply operation double-throw monolithic CMOS analog switches. Designed Low R : 3 at 4.2 V ON to operate from 1.8 V to 5.5 V power supply, the DG2517, RoHS 242 MHz, - 3 dB bandwidth COMPLIANT DG2518 achieves a bandwidth of 242 MHz while providing Low off-isolation, - 51 dB at 10 MHz low on-resistance (3 ), excellent on-resistance matching + 1.6 V logic compatible (0.2 ) and flatness (1 ) over the entire signal range. The DG2517, DG2518 offers the advantage of high linearity BENEFITS that reduces signal distortion, making ideal for audio, video, High linearity and USB signal routing applications. Additionally, the Low power consumption DG2517, DG2518 are 1.6 V logic compatible within the full High bandwidth operation voltage range. Full rail signal swing range Built on Vishay Siliconixs proprietary sub-micron high- density process, the DG2517, DG2518 brings low power APPLICATIONS consumption at the same time as reduces PCB spacing with the MSOP10 and DFN10 packages. USB/UART signal switching Audio/video switching As a committed partner to the community and the environment, Vishay Siliconix manufactures this product Cellular phone with the lead (Pb)-free device terminations. The DFN Media players package has a nickel-palladium-gold device termination and Modems is represented by the lead (Pb)-free-E4 suffix. The MSOP Hard drives package uses 100 % matte Tin device termination and is PCMCIA represented by the lead (Pb)- free-E3 suffix. Both the matte Tin and nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL ratings. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2517 IN1 COM1 1 10 NO1 NC1 2 9 TRUTH TABLE GND V+ 3 8 Logic NC1 and NC2 NO1 and NO2 NO2 NC2 4 7 0ON OFF IN2 COM2 1OFF ON 5 6 Top View DG2518 IN1 COM1 1 10 ORDERING INFORMATION NC1 NO1 2 9 Temp. Range Package Part Number GND V+ 3 8 DG2517DQ-T1-E3 MSOP-10 DG2518DQ-T1-E3 NC2 NO2 4 7 - 40 C to 85 C DG2517DN-T1-E4 IN2 COM2 DFN-10 6 5 DG2518DN-T1-E4 Top View Document Number: 74333 www.vishay.com S-82589-Rev. B, 27-Oct-08 1DG2517, DG2518 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Reference to GND V+ - 0.3 to + 6 V a IN, COM, NC, NO - 0.3 to (V+ + 0.3) Continuous Current (Any terminal) 50 mA Peak Current (Pulsed at 1 ms, 10 % duty cycle) 200 Storage Temperature (D Suffix) - 65 to 150 C c MSOP-10 320 b Power Dissipation (Packages) mW d DFN-10 1191 Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 4.0 mW/C above 70 C. d. Derate 14.9 mW/C above 70 C. SPECIFICATIONS (V+ = 3 V) Test Conditions Limits Otherwise Unless Specified - 40 C to 85 C e a b c b V+ = 3 V, 10 %, V = 0.5 or 1.4 V Parameter Symbol Temp. Unit IN Min. Typ. Max. Analog Switch V , V , d NO NC Analog Signal Range Full 0 V+ V V COM V+ = 2.7 V, V = 1.5 V Room 3.2 4.5 COM R On-Resistance ON I = 10 mA Full 5.0 NO/NC R V+ = 2.7 V, V = 1.5, 2 V Room 1.0 1.4 ON COM R Flatness ON Flatness I = 10 mA Full 16 NO/NC V+ = 2.7 V, V = 1.5 V Room 0.1 0.3 COM Match Between Channels R R ON ON I = 10 mA Full 0.4 NO/NC I NO(off), Room - 1 1 I Full - 10 10 NC(off) V+ = 3.6 V, V , V = 0.3 V/ 3 V f NO NC Switch Off Leakage Current V = 3 V/0.3 V COM Room - 1 1 I nA COM(off) Full - 10 10 Room - 1 1 f I Channel-On Leakage Current V+ = 3.6 V, V V = V = 0.3 V/3 V COM(on) NO, NC COM Full - 10 10 Digital Control d V Full 1.4 Input High Voltage INH V V Input Low Voltage Full 0.5 INL C Input Capacitance Full 4 pF in I or I Input Current Full 1 1 A INL INH Dynamic Characteristics Room 15 30 t Turn-On Time ON V+ = 2.7 V, V or V = 1.5 V Full 50 NO NC R = 300 , C = 35 pF Room 10 25 ns L L t Turn-Off Time OFF Full 35 t V or V = 1.5 V, R = 300 , C = 35 pF Full 1 Break-Before-Make Time d NO NC L L d Q Charge Injection C = 1 nF, V = 1.5 V, R = 0 Room 1 pC INJ L GEN GEN BW - 3 dB Bandwidth 0 dBm, C = 5 pF, R = 50 Room 242 MHz L L f = 1 MHz Room - 71 d OIRR Off-Isolation R = 50 , C = 5 pF L L f = 10 MHz Room - 51 dB f = 1 MHz Room - 73 d X Crosstalk R = 50 , C = 5 pF TALK L L f = 10 MHz Room - 55 C Room 8 NO(off) d N , N Off Capacitance O C C Room 8 NC(off) V = 0 or V+, f = 1 MHz pF IN C Room 35 NO(on) d Channel-On Capacitance C Room 35 NC(on) Power Supply I+ Power Supply Current V = 0 or V+ Full 0.01 1.0 A IN Notes: a. Room = 25 C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. V = input voltage to perform proper function. IN f. Guaranteed by 5 V leakage testing, not production tested. www.vishay.com Document Number: 74333 2 S-82589-Rev. B, 27-Oct-08