DG2519E www.vishay.com Vishay Siliconix High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DESCRIPTION FEATURES Single supply (1.8 V to 5.5 V) The DG2519E is monolithic CMOS dual single-pole / double-throw (SPDT) analog switches. It is specifically Low on-resistance - R : 2.5 ON designed for low-voltage, high bandwidth applications. Crosstalk and off isolation: -61 dB at 1 MHz The DG2519E on-resistance, matching and flatness are MSOP-10 and DFN-10 package guaranteed over the entire analog voltage range. Wide Material categorization: for definitions of dynamic performance is achieved with typical at -61 dB for compliance please see www.vishay.com/doc 99912 both cross-talk and off-isolation at 1 MHz. BENEFITS Both SPDTs operate with independent control logic, Reduced power consumption conduct equally well in both directions and block signals up High accuracy to the power supply level when off. Break-before-make is Reduce board space guaranteed. Low-voltage logic compatible With fast switching speeds, low on-resistance, high High bandwidth bandwidth, and low charge injection, the DG2519E are ideally suited for audio and video switching with high APPLICATIONS linearity. Cellular phones Built on Vishay Siliconixs low voltage CMOS technology, Speaker headset switching the DG2519E contain an epitaxial layer which prevents Audio and video signal routing latch-up PCMCIA cards Low-voltage data acquisition ATE FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE LOGIC EN NC1 and NC2 NO1 and NO2 IN COM1 1 10 0 1 ON OFF NO1 NC1 2 9 11 OFF ON 00 OFF OFF GND V+ 3 8 10 OFF OFF NO2 NC2 4 7 EN COM2 5 6 ORDERING INFORMATION TEMP. RANGE PACKAGE PART NUMBER Top view MSOP-10 DG2519EDQ-T1-GE3 -40 C to +85 C DFN-10 DG2519EDN-T1-GE4 ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT UNIT Reference V+ to GND -0.3 to +6 V a IN, COM, NC, NO -0.3 to (V+ + 0.3) Continuous current (any terminal) 50 mA Peak current (pulsed at 1 ms, 10 % duty cycle) 200 Storage temperature (D suffix) -65 to +150 C c MSOP-10 320 b Power dissipation (packages) mW d DFN-10 1191 ESD / HBM EIA / JESD22-A114-A 7.5k V ESD / CDM EIA / JESD22-C101-A 1.5k Latch up JESD78 300 mA Notes a. Signals on NC, NO, COM, IN, or EN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to PC board c. Derate 4 mW/C above 70 C d. Derate 14.9 mW/C above 70 C S17-0461-Rev. A, 03-Apr-17 Document Number: 78595 1 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DG2519E www.vishay.com Vishay Siliconix SPECIFICATIONS (V+ = 3 V) LIMITS TEST CONDITIONS TEMP. -40 C to +85 C PARAMETER SYMBOL OTHERWISE UNLESS SPECIFIED UNIT a e c b c V+ = 3 V, 10 %, V = 0.4 V, V = 1.5 V IN/ENL IN/ENH MIN. TYP. MAX. Analog Switch d Analog signal range V Full 0 - V+ V ANALOG Room - 7 11 V+ = 1.8 V, V = 0.4 V / V+, I = 8 mA NC/NO NC/NO Full - - 13 Drain-source on-resistance R DS(on) Room - 4.6 5.5 V+ = 2.7 V, V = 0.8 V / 1.8 V, I = 10 mA COM COM Full - - 6.5 Room - 0.02 0.3 On-resistance matching R DS(on) Full - - 0.6 V+ = 2.7 V, V = 0.8 V / 1.4 V / 1.8 V, COM I = 10 mA COM Room - 0.62 1.1 d, f On-resistance flatness R flat(on) Full - - 1.5 Room -1 0.01 1 g Off leakage current I NC/NO(off) Full -5 - 5 V+ = 3.6 V, V = 1 V / 3.2 V, NC/NO V = 3.2 V / 1 V, V = 0 V COM EN Room -1 0.01 1 g COM off leakage current I nA COM(off) Full -5 - 5 Room -1 0.01 1 Channel-on leakage I V+ = 3.3 V, V = V = 1 V / 3.2 V g COM(on) COM NC/NO current Full -5 - 5 Digital Control d Input current I or I Full -1 - 1 A INL INH d Input high voltage V Full 1.5 - - INH V d Input low voltage V Full - - 0.4 INL d Digital input capacitance C Room - 3 - pF IN Dynamic Characteristics Room - 21 45 Turn-on time t ON Full - - 50 Room - 11 35 Turn-off time t V = 3 V, C = 35 pf, R = 300 ns OFF NC/NO L L Full - - 45 Room 3 13 - d Break-before-make time t BBM Full 2 - - d Charge injection Q C = 1 nF, V = 1.5 V, R = 0 Room - -10.2 - pC INJ L gen gen d Bandwidth BW C = 5 pF (set up capacitance) Room - 222 - MHz L f = 1 MHz Room - -58 - d Off-isolation OIRR R = 50 , C = 5 pF L L f = 10 MHz Room - -47 - dB f = 1 MHz Room - -57 - d Channel-to-channel crosstalk X R = 50 , C = 5 pF TALK L L f = 10 MHz Room - -47 - C Room - 7 - NO(off) d NO, NC Off capacitance C Room - 7 - NC(off) V+ = 2.7 V, f = 1 MHz pF C Room - 24 - NO(on) d Channel-on capacitance C Room - 24 - NC(on) Power Supply Power supply range V+ 2.7 - 3.3 V d Power supply current I+ V+ = 2.7 V, V = 0 V or 2.7 V Full - - 1 A IN Notes a. Room = 25 C, Full = as determined by the operating suffix b. Typical values are for design aid only, not guaranteed nor subject to production testing c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet d. Guarantee by design, not subjected to production test = V+ voltage to perform proper function e. V IN f. Crosstalk measured between channels g. Guarantee by 5 V testing S17-0461-Rev. A, 03-Apr-17 Document Number: 78595 2 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000