DG271B Vishay Siliconix High-Speed Quad Monolithic SPST CMOS Analog Switch DESCRIPTION FEATURES Fast switching t : 55 ns ON The DG271B high speed quad single-pole single-throw Pb-free Low charge injection: 5 pC analog switch is intended for applications that require low Available Low r : 32 on-resistance, low leakage currents, and fast switching DS(on) RoHS* speeds. TTL/CMOS compatible COMPLIANT Low leakage: 50 pA Built on the Vishay Siliconix proprietary high voltage silicon gate process to achieve superior on/off performance, each BENEFITS switch conducts equally well in both directions when on, and Fast settling times blocks up to the supply voltage when off. An epitaxial layer Reduced switching glitches prevents latchup. High precision The DG271B has a redesign internal regulator which improves start-up over the DG271. APPLICATIONS High-speed switching As a committed partner to the community and the Sample/hold environment, Vishay Siliconix manufactures this product Digital filters with the lead (Pb)-free device terminations. For analog Op amp gain switching switching products manufactured with 100 % matte tin Flight control systems device terminations, the lead (Pb)-free -E3 suffix is being used as a designator. Automatic test equipment Choppers Communication systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line and SOIC TRUTH TABLE Logic Switch IN IN 1 1 16 2 0 ON D D 1 2 2 15 1OFF S S Logic0 0.8 V 1 3 14 2 Logic1 2.4 V V V+ 4 13 GND NC 5 12 S S 4 3 6 11 D D 4 3 7 10 IN IN 4 3 8 9 Top View * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70966 www.vishay.com S-80263-Rev. C, 11-Feb-08 1DG271B Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number 0 C to 70 C 16-Pin Plastic DIP DG271BCJ-E3 DG271BDY-E3 - 40 C to 85 C 16-Pin Narrow SOIC DG271BDY-T1-E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Limit Unit V+ to V- 44 GND to V- 25 V (V-) - 2 to (V+) + 2 a Digital Inputs V , V S D or 20 mA, whichever occurs first Current, Any Terminal 30 mA Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 (DY Suffix) - 65 to 150 Storage Temperature C (CJ Suffix) - 65 to 125 c 470 16-Pin Plastic DIP b mW Power Dissipation (Package) d 600 16-Pin Plastic Narrow SOIC Notes: a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. X X X b. All leads welded or soldered to PC board. c. Derate 6.5 mW/C above 75 C. d. Derate 7.6 mW/C above 75 C. www.vishay.com Document Number: 70966 2 S-80263-Rev. C, 11-Feb-08