DG2735, DG2736 Vishay Siliconix Low Voltage, 0.6 , Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2735, DG2736 are low voltage, low on-resistance, Low voltage operation (1.65 V to 4.3 V) dual single-pole/double-throw (SPDT) monolithic CMOS Low on-resistance - R : 0.6 at 2.7 V ON analog switches designed for high performance switching of Fast switching: t = 55 ns at 2.7 V ON analog signals. Combining low-power, high speed, low T = 40 ns at 2.7 V OFF on-resistance, and small package size, the DG2735, Latch-up current > 300 mA (JESD78) DG2736 are ideal for portable and battery power applications. Material categorization: For definitions of compliance The DG2735, DG2736 have an operation range from 1.65 V please see www.vishay.com/doc 99912 to 4.3 V single supply. The DG2735 has two separate control pins with for the separated two SPDT switched. The DG2736 BENEFITS has an EN pin. All switches are at high impedance mode Reduced power consumption when the EN is high. High accuracy The DG2735, DG2736 are guaranteed 1.65 V logic Reduce board space compatible, allowing the easy interface with low voltage DSP TTL/1.65 V logic compatible or MCU control logic and ideal for one cell Li-ion battery direct power. APPLICATIONS The switch conducts signals within power rails equally well in both directions when on, and blocks up to the power supply Cellular phones level when off. Break-before-make is guaranteed. Speaker headset switching The DG2735, DG2736 are built on Vishay Siliconixs sub Audio and video signal routing micron CMOS low voltage process technology and provides PCMCIA cards greater than 300 mA latch-up protection, as tested per Battery operated systems JESD78. Portable media player Handheld test instruments As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device terminations. DG2735, DG2736 are offered in a miniQFN package. The miniQFN package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free -E4 suffix. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL ratings. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2735 DG2736 miniQFN-10L miniQFN-10L 7 6 7 6 NC1 IN2 8 5 EN 5 NC1 8 COM2 9 4 IN1 COM2 9 4 IN1 NO2 10 3 COM1 NO2 10 3 COM1 1 2 1 2 Pin 1: LONG LEAD Pin 1: LONG LEAD Device Marking: Ax for DG2735 Device Marking: Bx for DG2736 x = Date/Lot Traceability Code (Top View) (Top View) Bx Ax or Pin 1 Pin 1 Note: Pin 1 has long lead Document Number: 74420 www.vishay.com For technical questions, contact: analogswitchtechsupport vishay.com S12-2498-Rev. D, 22-Oct-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V+ NC2 NO1 GND V+ NC2 NO1 GNDDG2735, DG2736 Vishay Siliconix TRUTH TABLE ORDERING INFORMATION Logic EN (DG2736 only) NC1, 2 NO1, 2 Temp. Range Package Part Number 01 OFFOFF DG2735DN-T1-E4 - 40 C to 85C miniQFN10 DG2736DN-T1-E4 11 OFFOFF 00 ON OFF 10 OFF ON ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V+ - 0.3 to 5 Reference to GND V a IN, COM, NC, NO - 0.3 to (V+ + 0.3) Current (Any terminal except NO, NC or COM) 30 Continuous Current (NO, NC, or COM) 250 mA Peak Current (Pulsed at 1 ms, 10 % duty cycle) 500 Storage Temperature (D Suffix) - 65 to 150 C b c Power Dissipation (Packages) miniQFN10 208 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 4 mW/C above 70 C. SPECIFICATIONS (V+ = 3 V) Limits Test Conditions - 40 C to 85 C Unless Otherwise Specified e a b c b Parameter Symbol V+ = 3 V, 10 %,V = 0.4 V or 1.65 V Temp. Unit Min. Typ. Max. IN Analog Switch d Analog Signal Range V R Full 0 V+ V analog DS(on) V+ = 2.7 V, I = 100 mA, V = 0.5 V NO/NC COM Room 0.5 0.6 V+ = 2.7 V, I = 100 mA, V = 1.5 V NO/NC COM V+ = 2.7 V, I = 100 mA, V = 0.5 V NO/NC COM Full 0.5 V+ = 2.7 V, I = 100 mA, V = 1.5 V NO/NC COM On-Resistance R DS(on) V+ = 4.3 V, I = 100 mA, V = 0.9 V 0.4 NO/NC COM Room 0.5 V+ = 4.3 V, I = 100 mA, V = 2.5 V 0.3 NO/NC COM = 100 mA, V = 0.9 V V+ = 4.3 V, I NO/NC COM Full 0.5 V+ = 4.3 V, I = 100 mA, V = 2.5 V NO/NC COM V+ = 2.7 V, I = 100 mA, NO/NC V = 0.5 V, 1.5 V COM d R Match R Room 0.06 0.08 ON ON V+ = 4.3 V, I = 100 mA, NO/NC V = 0.9 V, 2.5 V COM R = 100 mA, V+ = 2.7 V, I d ON NO/NC R resistance flatness Room 0.15 ON flatness V = 0.5 V, 1.5 V COM Room - 2 2 I NO/NC(off) Full - 10 10 Switch Off Leakage V+ = 4.3 V, V = 0.3 V/4 V, NO/NC Current V = 4 V/0.3 V COM Room - 2 2 I nA COM(off) Full - 10 10 - 5 5 Channel-On Leakage Room I V+ = 4.3 V, V = V = 4 V/0.3 V COM(on) NO/NC COM Current Full - 20 20 For technical questions, contact: analogswitchtechsupport vishay.com Document Number: 74420 www.vishay.com S12-2498-Rev. D, 22-Oct-12 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000