DG308A, DG309 Vishay Siliconix Quad Monolithic SPST CMOS Analog Switches DESCRIPTION FEATURES 15 V analog input range Featuring low on-resistance (60 ) and fast switching Low on-resistance: 60 (130 ns), the DG308A is supplied in the normally open configuration while DG309 is supplied normally closed. Fast switching: 130 ns Input thresholds are high voltage CMOS compatible. Low power dissipation: 30 nW Designed with the Vishay Siliconix PLUS-40 CMOS process CMOS logic compatible to combine low power dissipation with a high breakdown voltage rating of 44 V, each switch conducts equally well in BENEFITS both directions when on, and blocks up to the supply voltage Full rail-to-rail analog signal range when off. An epitaxial layer prevents latch up. Low signal error The DG308B, DG309B upgrades are recommended for new Wide dynamic range designs. Single or dual supply capability Static protected logic inputs Space savings (TSSOP) APPLICATIONS Portable and battery powered instrumentation Communication systems Computer peripherals High-speed multiplexing FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG308A IN 1 1 16 IN For SPST Switches per Package 2 D TRUTH TABLE 1 D 2 15 2 Logic DG308A DG309 S 1 3 14 S 2 0 OFF ON V 1ON OFF V+ 4 13 Logic 0 3.5 V GND NC 5 12 Logic 1 11 V S S 4 6 11 3 D D 4 7 10 3 IN IN 4 8 9 3 Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70046 www.vishay.com S11-0303-Rev. G, 28-Feb-11 1DG308A, DG309 Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number DG308ACJ DG308ACJ-E3 0 C to 70 C 16-Pin Plastic DIP DG309CJ DG309CJ-E3 DG308ADY DG308ADY-E3 DG308ADY-T1 DG308ADY-T1-E3 16-Pin Narrow SOIC DG309DY DG309DY-E3 DG309DY-T1 DG309DY-T1-E3 - 40 C to 85 C DG308ADQ DG308ADQ-E3 DG308ADQ-T1 DG308ADQ-T1-E3 16-Pin TSSOP DG309DQ DG309DQ-E3 DG309DQ-T1 DG309DQ-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Voltages Referenced V+ to V- 44 GND 25 V (V-) - 2 to (V+) + 2 or a Digital Inputs , V , V S D 20 mA, whichever occurs first Current, Any Terminal Except S or D 30 S or D 20 mA Continuous Current (Pulsed at 1 ms, 10 % duty cycle max.) 70 (AK Suffix) - 65 to 150 Storage Temperature C (CJ, DY and DQ Suffix) - 65 to 125 c 16-Pin Plastic DIP 470 b e Power Dissipation 16-Pin Narrow SOIC and TSSOP 600 mW d 16-Pin CerDIP 900 Notes: a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. X X X b. All leads welded or soldered to PC board. c. Derate 12 mW/C above 75 C. d. Derate 6.5 mW/C above 25 C. e. Derate 7.6 mW/C above 75 C. www.vishay.com Document Number: 70046 2 S11-0303-Rev. G, 28-Feb-11