DG3257 www.vishay.com Vishay Siliconix 700 MHz, -3 dB Bandwidth Single SPDT Analog Switch DESCRIPTION FEATURES DG3257 is a low R , high bandwidth analog switch 1.65 V to 5.5 V single supply operation ON configured in single SPDT. It achieves 5 switch on Low resistance: 5 /typ. at 4.2 V resistance, greater than 700 MHz -3 dB bandwidth with 5 pF Switch ON capacitance: 9 pF typical load, and a channel to channel crosstalk at -32 dB and -3 dB bandwidth: 700 MHz isolation at -33 dB. Fabricated with high density sub micro CMOS process, the DG3257 provides low parasitic Power down protection capacitance, handles bidirectional signal flow with Signal swing over V+ capable (when signal swing over V+, minimized phase distortion. Guaranteed 1.4 V logic high signal pin current: typically (V - 0.6 V)/120 ) S threshold makes it possible to interface directly with low Control logic S pin voltage can go beyond V+ voltage MCUs. Break before make switching The DG3257 is designed for a wide range of operating Latch up current: 300 mA (JESD78) voltages from 1.65 V to 5.5 V that can be driven directly from one cell Li-ion battery. On-chip protection circuit ESD / HBM: 6 kV, protects again fault events when V+ goes zero. Latch up ESD / CDM: 1 kV current is 300 mA, as per JESD78, and its ESD tolerance TTL/CMOS compatible exceeds 6 kV. Material categorization: for definitions of compliance Packaged in ultra small DFN6L (1 mm x 1 mm), it is ideal please see www.vishay.com/doc 99912 for portable high speed mix signal switching application. As a committed partner to the community and the APPLICATIONS environment, Vishay Siliconix manufactures this product Smart phones with lead (Pb)-free device termination. Tablet, e-readers The DFN6L package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free Camera, audio devices -GE4 suffix to the ordering part number. The Computer and peripherals nickel-palladium-gold device terminations meet all Data storage JEDEC standards for reflow and MSL rating. As a further IoT sign of Vishay Siliconix s commitment, the DG3257 is fully RoHS-complaint. Wearable Portable healthcare FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DFN-6L 1 x 1 NO 1 6 IN Bx GND25 V+ Pin 1 Device marking: Bx for DG3257 NC34 COM x = Date / Lot traceability code Top view ORDERING INFORMATION TEMP. RANGE PACKAGE PART NUMBER -40 C to +85 C DFN-6L DG3257DN-T1-GE4 S17-0438-Rev. B, 20-Mar-17 Document Number: 75945 1 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000DG3257 www.vishay.com Vishay Siliconix TRUTH TABLE PIN DESCRIPTIONS IN NC NO PIN NAME DESCRIPTION 0ON OFF IN Logic select Input 1OFF ON V+ Power pin GND Power ground pin NC Normal close data port NO Normal open data port COM Common data port ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER CONDITIONS LIMITSUNIT V+, S Reference to GND -0.3 to +6 V COM, NO, NC Reference to GND -0.3 to +6 Maximum continuous switch current 50 mA Maximum pulse switch current Pulsed at 1 ms, 10 % duty cycle 100 Thermal resistance 407 C/W ESD / HBM EIA / JESD22-A114-A 6000 V ESD / CDM EIA /JESD22-C101A 1000 Temperature Operating temperature -40 to +85 Max. operating junction temperature 150 C Operating junction temperature 125 Storage temperature -65 to +150 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TEST CONDITIONS a -40 C to TYP. / PARAMETER SYMBOL V+ = 3 V, V = 1.3 V, V = 0.5 V +25 C UNIT INH INL +85 C MAX. OTHERWISE UNLESS SPECIFIED Analog Switch Analog signal range V 0 to 5.5 V ANALOG 28 - Typ. V+ = 1.8 V, V = 0 V to V+, I = 8 mA NC/NO S 47 54 Max. 7- Typ. V+ = 3 V, V = 0.4 V, I = 8 mA NC/NO S 89 Max. 6- Typ. Drain-source on-resistance R V+ = 3.6 V, V = 0.4 V, I = 8 mA DS(on) NC/NO S 78 Max. 5- Typ. V+ = 4.2 V, V = 0.4 V, I = 8 mA NC/NO S 67 Max. 5- Typ. V+ = 5 V, V = 0.4 V, I = 8 mA NC/NO S 5.5 6 Max. 2- Typ. On-resistance flatness R V+ = 3 V, V = 0 V, 1 V, I = 8 mA flat(on) NC/NO S 36 Max. 0.4 - Typ. On-resistance matching R V+ = 2.7 V to 5.5 V, V = 0 V to V+, I = 8 mA DS(on) S S 0.6 0.8 Max. 0.2 - Typ. V+ = 5.5 V, V = 1 V / 4.5 V, COM Switch off leakage current I /I S d(off) V = 4.5 V / 1 V NC/NO - 20 Max. nA 0.2 - Typ. V+ = 5.5 V, V = 1 V / 4.5 V, COM Channel on leakage current I d(on) V = open NC/NO - 20 Max. Power down leakage I V+ = 0 V, V = 4.5 V 1 - Max. A COM(PD) COM S17-0438-Rev. B, 20-Mar-17 Document Number: 75945 2 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000