DG4157E www.vishay.com Vishay Siliconix Powered-off Isolation, 0.86 , 1.65 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) DESCRIPTION FEATURES The DG4157E is a high performance single-pole, Low switch on-resistance (0.86 ) double-throw (SPDT) analog switch designed for 1.65 V to 1.65 V to 5.5 V single supply operation Available 5.5 V operation with a single power rail. Isolation in powered-off mode Fabricated with high density CMOS technology, the device Guaranteed 1.8 V logic high achieves low on resistance of 0.86 at a 4.5 V power supply, low power consumption, and fast switching speeds. Control logic inputs can go over V+ The DG4157E can handle both analog and digital signals Low charge injection (5 pC) and permits signals with amplitudes of up to V+ to be Low total harmonic distortion transmitted in either direction. Its control logic inputs can go Break before make switching over V+ up to 5.5 V. The control logic input high threshold is guaranteed as low as 1.8 V over the power supply range up Latch-up performance exceeds 300 mA per JESD 78 to 5.5 V. It features break before make switching ESD tested performance. Its -3 dB bandwidth is typically 152 MHz. - 7000 V human body model (JS-001) A powered-off protection circuit is built into the switch to prevent an abnormal current flow from COM pin to V+ during - 1000 V charge device model (JS-002) the power-down condition. Each output pin can withstand Ultra compact DFN-6L 1 mm x 1 mm x 0.35 mm package greater than 7 kV (human body model). Material categorization: for definitions of compliance Operation temperature is specified from -40 C to +85 C. please see www.vishay.com/doc 99912 The DG4157E is available in the ultra compact DFN-6L and SC-70-6 packages. APPLICATIONS Smartphones and tablets Consumer and computing Portable instrumentation Medical equipment FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION SC-70-6L DFN-6L S 1 6 B B 1 1 6 S 1 GND 2 5V+ V+ 2 5 GND B 3 4 A 0 AB 3 4 0 Top view Top view H4XXX CX Pin 1 Pin 1 Device marking: H4XXX Device marking: CX XXX = date / lot traceability code X = date / lot traceability code TRUTH TABLE ORDERING INFORMATION LOGIC INPUT (S) FUNCTION TEMP. RANGE PACKAGE PART NUMBER 0 B connected to A SC-70-6L DG4157EDL-T1-GE3 0 -40 C to +85 C 1B connected to A DFN-6L DG4157EDN-T1-GE4 1 S18-0423-Rev. C, 23-Apr-18 Document Number: 75778 1 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000DG4157E www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT UNIT V+, A, B , B , S reference to GND -0.3 to 6 V 0 1 Continuous current (any terminal) 200 mA Peak current (pulsed at 1 ms, 10 % duty cycle) 400 a Thermal resistance 407 C/W ESD / HBM JS-001 7000 V ESD / CDM JS-002 1000 Latch up JESD78 300 mA Operating temperature -40 to +85 Max. operating junction temperature 150 C Operating junction temperature 125 Storage temperature -65 to +150 Note a. Measured on an 1 x 1 inch FR4 board, using 0.39 by 1 , 2 oz. copper trace without air flow Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS LIMITS TEST CONDITIONS a -40 C to +85 C PARAMETER SYMBOL UNLESS OTHERWISE SPECIFIED TEMP. UNIT e V+ = 3 V, V = 0 V or V+ b c b S MIN. TYP. MAX. DC Characteristics Room - 1.6 2 V+ = 2.7 V, B or B = 1.5 V, 0 1 I = 100 mA O Full - - 3 On resistance R ON Room - 0.86 1.2 V+ = 4.5 V, B or B = 3.5 V, 0 1 I = 100 mA O Full - - 1.5 V+ = 2.7 V, B or B = 0.75 V, 1.5 V, 0 1 Room - 0.2 - I = 100 mA O On resistance flatness R FLATNESS Room - 0.05 0.3 V+ = 4.5 V, B or B = 1 V, 3.5 V, 0 1 I = 100 mA O Full - - 0.4 V+ = 2.7 V, B or B = 1.5 V, 0 1 Room - 0.003 - I = 100 mA O On resistance match R ON Room - 0.004 0.12 V+ = 4.5 V, B or B = 3.5 V, 0 1 I = 100 mA O Full - - 0.15 Room -3 1.36 3 Switch off leakage current I OFF Full -20 - 20 V+ = 5.5 V, A = 1 V, 4.5 V nA B or B = 4.5 V, 1 V or floating 0 1 Room -4 1.4 4 Switch on leakage current I ON Full -40 - 40 V+ = 0 V, V = 4.5 V, V = GND Power down leakage I Full -1 - 1 A A(DP) A S Digital Control Input, high voltage V Full 1.8 - - INH V+ = 2.7 V to 5.5 V V Input, low voltage V Full - - 0.6 INL Input current I , I V = 0 or V+ Full -1 - 1 A S INH INL S18-0423-Rev. C, 23-Apr-18 Document Number: 75778 2 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000