DG441B, DG442B Vishay Siliconix Improved Quad SPST CMOS Analog Switches FEATURES DESCRIPTION Low On-Resistance: 45 The DG441B, DG442B are monolithic quad analog switches Low Power Consumption: 1 mW designed to provide high speed, low error switching of Fast Switching Action - t : 120 ns ON analog and audio signals. The DG441B, DG442B are Low Charge Injection - Q: - 1 pC upgrades to the original DG441, DG442. TTL/CMOS-Compatible Logic Combing low on-resistance (45 , typ.) with high speed Single Supply Capability (t 120 ns, typ.), the DG441B, DG442B are ideally ON Material categorization: For definitions of suited for Data Acquisition, Communication Systems, compliance please see www.vishay.com/doc 99912 Automatic Test Equipment, or Medical Instrumentation. BENEFITS Charge injection has been minimized on the drain for use in Less Signal Errors and Distortion sample-and-hold circuits. Reduced Power Supply Requirements The DG441B, DG442B are built using Vishay Siliconixs Faster Throughput high-voltage silicon-gate process. An epitaxial layer prevents Reduced Pedestal Errors latchup. Simple Interfacing When on, each switch conducts equally well in both APPLICATIONS directions and blocks input voltages to the supply levels Audio Switching when off. Data Acquisition Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG441B Dual-In-Line and SOIC IN IN 1 16 1 2 TRUTH TABLE D D 2 15 2 1 Logic DG441B DG442B S 1 3 14 S 2 0 ON OFF V+ V- 4 13 1OFF ON GND 5 12 NC Logic0 0.8 V S 6 11 S 4 3 Logic1 2.4 V D 7 10 D 4 3 IN 8 9 4 IN 3 Top View ORDERING INFORMATION DG441B Temp Range Package Part Number QFN16 (4 x 4 mm) DG441BDJ D IN IN D 1 1 2 2 DG441BDJ-E3 16 15 14 13 16-pin Plastic DIP DG442BDJ DG442BDJ-E3 S 1 S 12 1 2 DG441BDY-E3 V- 2 11 V+ - 40 C to 85 C DG441BDY-T1-E3 NC 16-pin Narrow SOIC GND 3 10 DG442BDY-E3 S S 4 4 3 9 DG442BDY-T1-E3 16 pin QFN 4 x 4 mm DG441BDN-T1-E4 5 6 7 8 (Variation 1) DG442BDN-T1-E4 D IN IN D 4 4 3 3 Top View For technical questions, contact: pmostechsupport vishay.com Document Number: 72625 www.vishay.com S13-1284-Rev. C, 27-May-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000DG441B, DG442B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V+ to V- 44 GND to V- 25 V (V-) - 2 to (V+) + 2 or a Digital Inputs , V , V S D 30 mA, whichever occurs first Continuous Current (Any Terminal) 30 mA Current, S or D (Pulsed at 1 ms, 10 % duty cycle ) 100 Storage Temperature - 65 to 125 C c 470 16-pin Plastic DIP b d 900 mW Power Dissipation (Package) 16-pin Narrow Body SOIC d 850 QFN-16 Notes: a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. X X X b. All leads welded or soldered to PC Board. c. Derate 6 mW/C above 75 C. d. Derate 12 mW/C above 75 C. For technical questions, contact: pmostechsupport vishay.com www.vishay.com Document Number: 72625 2 S13-1284-Rev. C, 27-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000