DG444B, DG445B Vishay Siliconix Improved Quad SPST CMOS Analog Switches FEATURES DESCRIPTION Low On-Resistance: 45 W The DG444B, DG445B are monolithic quad analog switches Low Power Consumption: 1 mW designed to provide high speed, low error switching of Fast Switching Action - t : 120 ns ON analog and audio signals. The DG444B, DG445B are Low Charge Injection upgrades to the original DG444, DG445. TTL/CMOS-Compatible Logic Combing low on-resistance (45 , typ.) with high speed Material categorization: For definitions of compliance please see (t 120 ns, typ.), the DG444B, DG445B are ideally suited ON www.vishay.com/doc 99912 for Data Acquisition, Communication Systems, Automatic BENEFITS Test Equipment, or Medical Instrumentation. Charge Low Signal Errors and Distortion injection has been minimized on the drain for use in Reduced Power Supply Consumption sample-and-hold circuits. Faster Throughput The DG444B, DG445B are built using Vishay Siliconixs Reduced Pedestal Errors Simple Interfacing high-voltage silicon-gate process. An epitaxial layer prevents latchup. APPLICATIONS When on, each switch conducts equally well in both Audio Switching Data Acquisition directions and blocks input voltages to the supply levels Sample-and-Hold Circuits when off. Communication Systems Automatic Test Equipment Medical Instruments FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG444B Dual-In-Line and SOIC IN 1 16 IN 1 2 TRUTH TABLE D D 2 15 1 2 Logic DG444B DG445B S 1 3 14 S 2 0 ON OFF V- 4 13 V+ 1OFF ON GND 5 12 V L Logic0 0.8 V S S Logic1 2.4 V 6 11 3 4 D D 4 7 10 3 IN 4 8 9 IN 3 Top View DG444B QFN16 (4 x 4 mm) ORDERING INFORMATION D IN IN D 1 1 2 2 Temp Range Package Part Number 16 15 14 13 DG444BDJ DG444BDJ-E3 S 1 S 16-pin Plastic DIP 1 12 2 DG445BDJ V- 2 V+ 11 DG445BDJ-E3 GND 3 V 10 L DG444BDY-E3 - 40 C to 85 C DG444BDY-T1-E3 S S 4 4 9 3 16-pin Narrow SOIC DG445BDY-E3 DG445BDY-T1-E3 5 6 7 8 16 pin QFN 4 x 4 mm DG444BDN-T1-E4 D IN IN D 4 4 3 3 (Variation 1) DG445BDN-T1-E4 Top View For technical questions, contact: pmostechsupport vishay.com Document Number: 72626 www.vishay.com S13-1287-Rev. C, 27-May-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000DG444B, DG445B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V+ to V- 44 GND to V- 25 V V (GND - 0.3 V) to (V+) + 0.3 V L (V-) - 2 to (V+) + 2 or a Digital Inputs , V , V S D 30 mA, whichever occurs first Continuous Current (Any Terminal) 30 mA Current, S or D (Pulsed at 1 ms, 10 % duty cycle) 100 Storage Temperature - 65 to 125 C c 470 16-pin Plastic DIP b d mW Power Dissipation (Package) 640 16-pin Narrow Body SOIC QFN-16 850 Notes: a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. X X X b. All leads welded or soldered to PC Board. c. Derate 6 mW/C above 75 C. d. Derate 8 mW/C above 75 C. For technical questions, contact: pmostechsupport vishay.com www.vishay.com Document Number: 72626 2 S13-1287-Rev. C, 27-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000