DG9431E www.vishay.com Vishay Siliconix 1 pC Charge Injection, 100 pA Maximum Leakage, +5 V / +3 V, SPDT Analog Switch DESCRIPTION FEATURES The DG9431E is a monolithic CMOS switch designed for 1 pC charge injection precision signal switching. The 17 low voltage part Guaranteed 100 pA max. switch on leakage at Available exhibits low charge injection over the full signal range, low 25 C leakage, low parasitic capacitance, and fast switching. Available 3.8 pF switch off and 7.8 pF switch on The DG9431E can switch both analog and digital signals. capacitances Each switch conducts equally well in both directions when +2.7 V to +5 V single supply operation on, and blocks up to the power supply level when off. Low on-resistance - R : 17 (typ.) at 5 V DS(on) Break-before-make switching is guaranteed. t : 32 ns, t : 10 ns switching time ON OFF The DG9431E offers 1 nW typical power consumption and 8 kV ESD (HBM), 1 kV ESD (CDM) tolerance. It is ideal for Typical power consumption: 1 nW use in low voltage instruments and healthcare devices, Over voltage tolerance on logic control IN pin fitting the circuits of low voltage ADC and DAC, sample and TTL / CMOS compatible hold, analog front end gain control, and signal path ESD (HBM): > 8000 V, ESD (CDM): >1000 V switching. The DG9431E is available in 6-lead TSOP and 8-lead SOIC packages. Latch-up current: > 300 mA (JESD78) Available in TSOP-6 and SOIC-8 APPLICATIONS Note Automatic test equipment * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For Process control and automation example, parts with lead (Pb) terminations are not RoHS-compliant. Data acquisition systems Please see the information / tables in this datasheet for details. Meters and instruments BENEFITS Medical and healthcare systems Low charge injection and leakage Communication systems Low parasitic capacitance Sample-and-hold systems Fast switching speed Relay replacements High ESD tolerance Battery powered systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION SOIC-8 TSOP-6 NO V+ 1 8 TRUTH TABLE IN 1 6 NO COM IN 2 7 LOGIC NC NO V+ COM 2 5 NC * 3 6 0ON OFF GND NC 3 4 GND 4 5 * 1OFF ON Top View Note Top View Logic 0 0.8 V *Not Connected Logic 1 2.4 V ORDERING INFORMATION TEMP. RANGE CONFIGURATION PART NUMBER PACKAGE MINIUM ORDER / PACKAGING QUANTITY 6-pin TSOP DG9431EDV-T1-GE3 Tape and reel 3000 units -40 C to +85 C DG9431E DG9431EDY-T1-GE3 Tape and reel 2500 units 8-pin SOIC DG9431EDY-GE3 Tube 500 units S16-2242Rev. A, 31-Oct-16 Document Number: 76459 1 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000DG9431E www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT UNIT Reference V+ to GND -0.3 to +6 V a IN, COM, NC, NO -0.3 to (V+ + 0.3) Continuous current (any terminal) 20 mA Peak current (pulsed at 1 ms, 10 % duty cycle) 40 ESD (HBM) (MIL-STD-883, method 3015) > 8000 V ESD (CDM) (ANSI / ESDA / JEDEC JS-002) > 1000 Latch up current, per JESD78 300 mA Storage temperature (D suffix) -65 to +125 C c 8-pin narrow body SOIC 400 b Power dissipation (packages) mW d 6-pin TSOP 570 Notes a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.5 mW/C above 75 C. d. Derate 7 mW/C above 70 C. SPECIFICATIONS (V+ = 3 V) D SUFFIX TEST CONDITIONS a -40 C TO +85 C PARAMETER SYMBOL UNLESS OTHERWISE SPECIFIED TEMP. UNIT e c b c V+ = 3 V, 10 %, V = 0.8 V or 2.4 V IN MIN. TYP. MAX. Analog Switch d Analog signal range V Full 0 - 3 V ANALOG Room - 35 50 V or V = 1.5 V, V+ = 2.7 V NO NC Drain-source onresistance R DS(on) I = 5 mA COM Full - - 65 d R match R V or V = 1.5 V Room - 0.4 2 DS(on) DS(on) NO NC R DS(on) f R flatness V or V = 1 V and 2 V Room - 4 8 DS(on) NO NC flatness Room -100 5 100 g NO or NC off leakage current I V or V = 1 V / 2 V, V = 2 V / 1 V NO/NC(off) NO NC COM Full -5000 - 5000 Room -100 5 100 g COM off leakage current I V = 1 V / 2 V, V or V = 2 V / 1 V pA COM(off) COM NO NC Full -5000 - 5000 Room -200 5 200 g Channel-on leakage current I V = V or V = 1 V / 2 V COM(on) COM NO NC Full -10 000 - 10 000 Digital Control Input current I or I Full - 0.001 - A INL INH Dynamic Characteristics Room - 43 120 Turn-on time t ON Full - - 200 V or V = 1.5 V Room 16 50 ns NO NC Turn-Off Time t OFF Full - - 120 Break-before-make time t Room 3 26 - d Charge injection Q C = 1 nF, V = 0 V, R = 0 Room - -0.28 - pC INJ L gen gen Off-isolation O Room - -80 - IRR R = 50 , C = 5 pF, f = 1 MHz dB L L Crosstalk X Room - -108 - TALK Source off capacitance C Room - 4 - S(off) f = 1 MHz pF Channel-on capacitance C Room - 8 - D(on) Power Supply Power supply range V+ 2.7 - 5.5 V Power supply current I+ V+ = 3.3 V, V = 0 V or 3.3 V - 0.0003 1 A IN S16-2242Rev. A, 31-Oct-16 Document Number: 76459 2 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000