DG9461 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9461 is a single-pole/double-throw monolithic CMOS Low Voltage Operation (+ 2.7 to + 5 V) analog device designed for high performance switching of Pb-free Low On-Resistance - r : 40 DS(on) Available analog signals. Combining low power, high speed Fast Switching - t : 35 ns, t : 20 ns ON OFF (t : 35 ns, t : 20 ns), low on-resistance (r : 40 ) RoHS* ON OFF DS(on) Low Leakage - I : 200 pA max COMPLIANT COM(on) and small physical size (TSOP-6), the DG9461 is ideal for Low Charge Injection - Q : 1 pC portable and battery powered applications requiring high INJ performance and efficient use of board space. Low Power Consumption TTL/CMOS Compatible The DG9461 is built on Vishay Siliconixs low voltage ESD Protection > 2000 V (Method 3015.7) BCD-15 process. Minimum ESD protection, per Method Available in TSOP-6 and SOIC-8 3015.7, is 2000 V. An epitaxial layer prevents latchup. Break-before-make is guaranteed for DG9461. BENEFITS Each switch conducts equally well in both directions when Reduced Power Consumption on, and blocks up to the power supply level when off. Simple Logic Interface High Accuracy Reduce Board Space (TSOP-6) APPLICATIONS Battery Operated Systems Portable Test Equipment Sample and Hold Circuits Cellular Phones Communication Systems Military Radio PBX, PABX Guidance and Control Systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TSOP-6 TRUTH TABLE IN NO 1 6 Logic NC NO V+ COM 2 5 0ON OFF GND 3 4 NC 1OFF ON Top View Logic0 0.8 V Logic1 2.4 V ORDERING INFORMATION SOIC-8 Temp Range Package Part Number NO V+ 1 8 DG9461DV-T1 TSOP-6 COM IN 2 7 DG9461DV-T1-E3 - 40 to 85 C NC * 3 6 DG9461DY-T1 SOIC-8 GND * DG9461DY-T1-E3 4 5 Top View *Not Connected * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70832 www.vishay.com S-71009Rev. C, 14-May-07 1DG9461 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Reference V+ to GND - 0.3 to + 13 V a - 0.3 V to (V+ + 0.3 V) IN, COM, NC, NO Continuous Current (Any terminal) 20 mA Peak Current (Pulsed at 1 ms, 10 % duty cycle) 40 ESD (Method 3015.7) > 2000 V Storage Temperature (D Suffix) - 65 to 125 C b c 400 mW Power Dissipation (Packages) 8-Pin Narrow Body SOIC Notes: a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. X X X b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/C above 75 C. SPECIFICATIONS (V+ = 3 V) D Suffix Test Conditions - 40 to 85 C Unless Otherwise Specified e a c b c V+ = 3 V, 10 %, V = 0.4 or 2.4 V Parameter Symbol Temp Min Typ Max Unit IN Analog Switch d V Full 0 3 V Analog Signal Range ANALOG V or V = 1.5 V, V+ = 2.7 V NO NC Room 50 80 r Drain-Source On-Resistance DS(on) Full 140 I = 5 mA COM d r V or V = 1.5 V Room 0.4 2 r Match DS(on) NO NC DS(on) r f DS(on) V or V = 1 and 2 V r Flatness Room 4 8 NO NC DS(on) Flatness NO or NC Off Leakage Room - 100 5100 I V or V = 1 V/2 V, V = 2 V/1 V NO/NC(off) NO NC COM g Full - 5000 5000 Current Room - 100 5100 g pA I V = 1 V/2 V, V or V = 2 V/1 V COM Off Leakage Current COM(off) COM NO NC Full - 5000 5000 Room - 200 10 200 g I V = V or V = 1 V/2 V Channel-On Leakage Current COM(on) COM NO NC Full - 10000 10000 Digital Control Input Current I or I Full 1 A INL INH Dynamic Characteristics Room 50 120 t Turn-On Time ON Full 200 V or V = 1.5 V Room 20 50 ns NO NC t Turn-Off Time OFF Full 120 t Break-Before-Make Time Room 3 20 d Charge Injection Q C = 1 nF, V = 0 V, R = 0 Room 1 5 pC INJ L gen gen R = 50 , C = 5 pF, f = 1 MHz Off-Isolation OIRR Room - 74 dB L L Source Off Capacitance C Room 7 S(off) f = 1 MHz pF C Channel-On Capacitance Room 32 D(on) Power Supply Power Supply Range V+ 2.7 12 V V+ = 3.3 V, V = 0 or 3.3 V Power Supply Current I+ 1A IN www.vishay.com Document Number: 70832 2 S-71009Rev. C, 14-May-07