333 3 ES07B-M, ES07D-M www.vishay.com Vishay Semiconductors Ultrafast Rectifier Surface-Mount FEATURES eSMP Series For surface mounted applications Low profile package Ideal for automated placement 1 2 Glass passivated pellet chip junction Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 23020 Meets JESD 201 class 2 whisker test Wave and reflow solderable 23019 AEC-Q101 qualified SMF (DO-219AB) Compatible to SOD-123W package case outline or SOD-123F and SOD-123FL Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 MECHANICAL DATA 3D Models Case: SMF (DO-219AB) Polarity: band denotes cathode end Weight: approx. 15 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape) 08/3K per 7 reel (8 mm tape) Circuit configuration: single PARTS TABLE PART ORDERING CODE MARKING REMARKS ES07B-M ES07B-M-18 or ES07B-M-08 GB Tape and reel ES07D-M ES07D-M-18 or ES07D-M-08 GD Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb TRPARAMETER TEST CONDITION PART SYMBOL VALUE UNIT ES07B-M V 100 V RRM Maximum repetitive peak reverse voltage ES07D-M V 200 V RRM ES07B-M V 70 V RMS Maximum RMS voltage ES07D-M V 140 V RMS ES07B-M V 100 V DC Maximum DC blocking voltage ES07D-M V 200 V DC T = 109 C I 1.2 A L F(AV) Maximum average forward rectified current (1) T = 65 C I 0.5 A A F(AV) Peak forward surge current 8.3 ms single half sine-wave T = 25 C I 30 A L FSM Note (1) Mounted on epoxy glass PCB with 3 mm x 3 mm Cu pads ( 40 m thick) THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 180 K/W thJA Operating junction and storage temperature range T , T -55 to 150 C j stg Note (1) Mounted on epoxy glass PCB with 3 mm x 3 mm Cu pads ( 40 m thick) Rev. 1.7, 26-Feb-2021 Document Number: 85192 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D ES07B-M, ES07D-M www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT ES07B-M V 0.98 V F (1) Instantaneous forward voltage I = 1 A F ES07D-M V 0.98 V F ES07B-M I 10 A R T = 25 C A ES07D-M I 10 A R Maximum DC reverse current at rated DC blocking voltage ES07B-M I 50 A R T = 100 C A ES07D-M I 50 A R ES07B-M t 25 ns rr I = 0.5 A, I = 1 A, F R Reverse recovery time I = 0.25 A rr ES07D-M t 25 ns rr ES07B-M C 4pF j Typical capacitance 4 V, 1 MHz ES07D-M C 4pF j Note (1) Pulse test: 300 s pulse width, 1 % duty cycle TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 7 f = 1 MHz 6 1 5 4 0.1 3 Typical at 150 C 2 0.01 Typical at 100 C 1 Typical at 25 C 0.001 0 000.2.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 18242 18244 V (V) V (V) F R Fig. 1 - Typical Forward Characteristics Fig. 3 - Typical Diode Capacitance vs. Reverse Voltage 1000 1.4 Lead temperature T = 150 C 1.2 j 100 T = 125 C j 1.0 T = 100 C j 10 0.8 T = 75 C j 0.6 1 T = 50 C j 0.4 T = 25 C Ambient temperature 0.1 j 0.2 T = 0 C j T = - 50 C j 0.01 0 0 40 80 120 160 200 05250 75 100 125 150 V (V) 18243 Temperature (Ambient or Lead) (C) 18245 R Fig. 2 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Rev. 1.7, 26-Feb-2021 Document Number: 85192 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) I (A) F I (A) C (pF) R D