ES2G-M3/52T Vishay

333 3 ES2F-M3, ES2G-M3 www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES Glass passivated pellet chip junction Ideal for automated placement Ultrafast reverse recovery time Low switching losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMB (DO-214AA) Material categorization: for definitions of compliance Cathode Anode please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling 3D Models application in switching mode converters and inverters for consumer, computer, and telecommunication. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2.0 A F(AV) Case: SMB (DO-214AA) V 300 V, 400 V RRM Molding compound meets UL 94 V-0 flammability rating I 50 A FSM Base P/N-M3 - halogen-free, RoHS-compliant, and t 35 ns rr commercial grade V 1.1 V F Terminals: matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package SMB (DO-214AA) M3 suffix meets JESD 201 class 2 whisker test Circuit configuration Single Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL ES2F ES2G UNIT Device marking code EF EG Maximum repetitive peak reverse voltage V 300 400 V RRM Working peak reverse voltage V 225 300 V RWM Maximum RMS voltage V 210 280 V RMS Maximum average forward rectified current at T = 110 C I 2.0 A L F(AV) Peak forward surge current 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 09-Apr-2020 Document Number: 89484 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DES2F-M3, ES2G-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL ES2F ES2G UNIT (1) Maximum instantaneous forward voltage 2.0 A V 1.1 V F T = 25 C 10 A Maximum reverse current at V I A RRM R T = 100 C 200 A I = 0.5 A, I = 1.0 A, F R Maximum reverse recovery time t 35 ns rr I = 0.25 A rr I = 1.0 A, dI/dt = 100 A/s, F Maximum reverse recovery time t 50 ns rr V = 30 V, I = 0.1 I R rr RM I = 1.0 A, dI/dt = 100 A/s, F Maximum reverse recovery current I 3.0 A RM V = 30 V, I = 0.1 I R rr RM I = 1.0 A, dI/dt = 100 A/s, F Maximum stored charge Q 50 nC rr V = 30 V, I = 0.1 I R rr RM Typical junction capacitance 4.0 V, 1 MHz C 15 pF J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL ES2F ES2G UNIT (1) R 75 JA Maximum thermal resistance C/W (1) R 25 JL Note (1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ES2G-M3/52T 0.096 52T 750 7 diameter plastic tape and reel ES2G-M3/5BT 0.096 5BT 3200 13 diameter plastic tape and reel Revision: 09-Apr-2020 Document Number: 89484 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000