333 3 ESH3B, ESH3C, ESH3D www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES Available Glass passivated pellet chip junction Ideal for automated placement Ultrafast recovery times for high efficiency Low forward voltage, low power loss High forward surge capability Meets MSL level 1, per J-STD-020, SMC (DO-214AB) LF maximum peak of 260 C Cathode Anode AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D Models For use in high frequency rectification and freewheeling application in switching mode converter and inverter for both, industrial and automotive. PRIMARY CHARACTERISTICS MECHANICAL DATA I 3.0 A F(AV) Case: SMC (DO-214AB) V 100 V, 150 V, 200 V RRM Molding compound meets UL 94 V-0 flammability rating t 25 ns rr Base P/N-E3 - RoHS-compliant, industrial grade V at I 0.90 V F F Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified ( X denotes revision code e.g. A, B, .....) T max. 175 C J Terminals: matte tin plated leads, solderable per Package SMC (DO-214AB) J-STD-002 and JESD 22-B102 Circuit configuration Single E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT Device marking code EHB EHC EHD Maximum repetitive peak reverse voltage V 100 150 200 RMM Maximum RMS voltage V 70 105 140 V RMS Maximum DC blocking voltage V 100 150 200 DC Maximum average forward rectified current (fig. 1) I 3.0 F(AV) A Peak forward surge current 8.3 ms single half sine-wave I 125 FSM superimposed on rated load Operating junction and storage temperature range T , T -55 to +175 C J STG Revision: 08-Apr-2020 Document Number: 84648 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DESH3B, ESH3C, ESH3D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT (1) Maximum instantaneous forward voltage I = 3 A V 0.90 V F F T = 25 C 5.0 A Maximum DC reverse current I A R at rated DC blocking voltage T = 125 C 150 A = 0.5 A, I = 1 A, I = 0.25 A t 25 Maximum reverse recovery time I F R rr rr T = 25 C 40 ns J I = 3 A, V = 30 V, F R Typical reverse recovery time t rr dI/dt = 50 A/s, I = 10 % I rr RM T = 100 C 55 J T = 25 C 25 J I = 3 A, V = 30 V, F R Typical stored charge Q nC rr dI/dt = 50 A/s, I = 10 % I rr RM T = 100 C 60 J Typical junction capacitance 4.0 V, 1 MHz C 70 pF J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT (1) R 50 JA Typical thermal resistance C/W (1) R 15 JL Note (1) Units mounted on PCB with 12.0 mm x 12.0 mm land areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ESH3D-E3/57T 0.211 57T 850 7 diameter plastic tape and reel ESH3D-E3/9AT 0.211 9AT 3500 13 diameter plastic tape and reel (1) ESH3DHE3 A/H 0.211 H 850 7 diameter plastic tape and reel (1) ESH3DHE3 A/I 0.211 I 3500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 08-Apr-2020 Document Number: 84648 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000