FE1A / 1B / 1C / 1D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features High temperature metallurgically bonded con- struction Cavity-free glass passivated junction Superfast recovery time for high efficiency Low forward voltage, high current capability Hermetically sealed package Low leakage current High surge current capability 17031 Polarity: Color band denotes cathode end Mechanical Data Mounting Position: Any Case: DO-204AP Sintered glass case Weight: approx. 560 mg Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Parts Table Part Type differentiation Package FE1A V = 50 V DO-204AP(G-1) RRM FE1B V = 100 V DO-204AP(G-1) RRM FE1C V = 150 V DO-204AP(G-1) RRM FE1D V = 200 V DO-204AP(G-1) RRM Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Part Symbol Value Unit Reverse voltage = Repetitive see electrical characteristics FE1A V = V 50 V R RRM peak reverse voltage FE1B V = V 100 V R RRM FE1C V = V 150 V R RRM FE1D V = V 200 V R RRM Maximum average forward 0.375 (9.5 mm) lead length at I 1.0 A F(AV) rectified current T = 75 C amb Peak forward surge current 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load (JEDEC Method) Operating junction and storage T , T - 55 to + 175 C J STG temperature range Document Number 86068 www.vishay.com Rev. 1.3, 11-Aug-04 1FE1A / 1B / 1C / 1D VISHAY Vishay Semiconductors Maximum Thermal Resistance T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit 1) R 65 K/W Typical thermal resistance JA R 20 K/W JL 1) Thermal resistance from junction to ambient and/or lead, 0.375 (9.5 mm) lead length mounted on P.C.B. with 0.5 x 0.5 (12 x 12 mm) copper pads. Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit Maximum instantaneous I = 1.0 A V 0.95 V F F forward voltage Maximum reverse current V = V , T = 25 C I 2.0 A R RRM amb R V = V , T = 100 C I 50 A R RRM amb R Maximum reverse recovery time I = 0.5 A, I = 1.0 A, I = 0.25 A t 35 ns F R rr rr Typical junction capacitance V = 4 V, f = 1 MHz C 45 pF R j Typical Characteristics (T = 25 C unless otherwise specified) amb 1.5 30 Resistive or Inductive Load TJ=TJmax. 0.375 (9.5mm) Lead Length 8.3ms Single Half Sine-Wave 25 (JEDEC Method) 1 20 15 0.5 10 5.0 0 0 1 10 100 0 25 50 75 100 125 150 175 gfe1a 01 AmbientTemperature (C) Number of Cycles at 60 H Z gfe1a 02 Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com Document Number 86068 2 Rev. 1.3, 11-Aug-04 Average Forward Rectified Current (A) Peak Forward Surge Current (A)