FEP30xP-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency 3 Low thermal resistance 2 1 High forward surge capability TO-3P (TO-247AD) Solder dip 260 C, 40 s PIN 2 PIN 1 Material categorization: for definitions of compliance PIN 3 CASE please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode PRIMARY CHARACTERISTICS power supplies, inverters, freewheeling diodes, DC/DC I 30 A F(AV) converters, and other power switching application. 50 V, 100 V, 150 V, 200 V, 300 V, V RRM 400 V, 500 V, 600 V MECHANICAL DATA I 300 A FSM Case: TO-3P (TO-247AD) t 35 ns, 50 ns rr Molding compound meets UL 94 V-0 flammability rating V at I = 15 A 0.95 V, 1.3 V, 1.5 V F F Base P/N-E3 - RoHS-compliant, commercial grade T max. 150 C J Terminals: matte tin plated leads, solderable per Package TO-3P (TO-247AD) J-STD-002 and JESD22-B102 Circuit configuration Common cathode E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) A FEP FEP FEP FEP FEP FEP FEP FEP PARAMETER SYMBOL UNIT 30AP 30BP 30CP 30DP 30FP 30GP 30HP 30JP Maximum repetitive peak reverse voltage V 50 100 150 200 300 400 500 600 V RRM Maximum RMS voltage V 35 70 105 140 210 280 350 420 V RMS Maximum DC blocking voltage V 50 100 150 200 300 400 500 600 V DC Maximum average forward rectified current 30 A I F(AV) at T = 100 C C Peak forward surge current 8.3 ms single half I 300 A FSM sine-wave superimposed on rated load per diode Operating storage and temperature range T , T -55 to +150 C/W J STG Revision: 27-May-2020 Document Number: 88597 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 FEP30xP-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A TEST FEP FEP FEP FEP FEP FEP FEP FEP PARAMETER SYMBOL UNIT CONDITIONS 30AP 30BP 30CP 30DP 30FP 30GP 30HP 30JP Maximum instantaneous 15.0 A V 0.95 1.3 1.5 V F forward voltage per diode Maximum DC reverse current at T = 25 C 10 C rated DC blocking voltage I A R T = 100 C 500 C per diode I = 0.5 A, F Maximum reverse recovery time I = 1.0 A, t 35 50 ns R rr per diode I = 0.25 A rr Typical junction capacitance 4.0 V, 1 MHz C 175 145pF J per diode THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A FEP FEP FEP FEP FEP FEP FEP FEP PARAMETER SYMBOL UNIT 30AP 30BP 30CP 30DP 30FP 30GP 30HP 30JP (1) Typical thermal resistance per diode R 1.0 C/W JC Note (1) Thermal resistance from junction to case per diode mounted on heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD FEP30JP-E3/45 6.15 30 30/tube Tube Revision: 27-May-2020 Document Number: 88597 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000