GDZ-Series
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Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
Silicon planar Zener diodes
Low Zener impedance and low leakage current
Popular in Asian designs
Compact surface mount device
Ideal for automated mounting
AEC-Q101 qualified
ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
PRIMARY CHARACTERISTICS
Base P/N-E3 - RoHS-compliant, commercial grade
PARAMETER VALUE UNIT
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
V range nom. 2.0 to 36 V
Z Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Test current I 5mA
ZT
V specification Pulse current
Z
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
GDZB2V0-E3-08 to GDZB36-E3-08
3000 (8 mm tape on 7" reel) 15 000/box
GDZB2V0-HE3-08 to GDZB36-HE3-08
GDZ-series
GDZB2V0-E3-18 to GDZB36-E3-18
10 000 (8 mm tape on 13" reel) 10 000/box
GDZB2V0-HE3-18 to GDZB36-HE3-18
PACKAGE
MOLDING COMPOUND MOISTURE SENSITIVITY
PACKAGE NAME WEIGHT SOLDERING CONDITIONS
FLAMMABILITY RATING LEVEL
MSL level 1
SOD-323 4.3 mg UL 94 V-0 260 C/10 s at terminals
(according J-STD-020)
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation P 200 mW
tot
T
Junction temperature 150 C
j
Storage temperature range T - 55 to + 150 C
stg
T
Operating temperature range - 55 to + 150 C
op
Rev. 1.8, 27-Feb-13 Document Number: 85766
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000GDZ-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
REVERSE
ZENER VOLTAGE RANGE TEST CURRENT DYNAMIC RESISTANCE
CURRENT
MARKING
V at I I I I at V Z at I Z at I
PART NUMBER Z ZT1 ZT1 ZT2 R R Z ZT1 ZK ZT2
CODE
V mA A V
MIN. NOM. MAX. MAX. MAX. MAX.
GDZ2V0B 02 2.02 2.0 2.2 5 0.5 120 0.5 100 1000
GDZ2V2B 12 2.22 2.2 2.41 5 0.5 120 0.7 100 1000
GDZ2V4B 22 2.43 2.4 2.63 5 0.5 120 1 100 1000
GDZ2V7B 32 2.69 2.7 2.91 5 0.5 100 1 110 1000
GDZ3V0B 42 3.01 3.0 3.22 5 0.5 50 1 120 1000
GDZ3V3B 52 3.32 3.3 3.53 5 0.5 20 1 120 1000
GDZ3V6B 62 3.6 3.6 3.845 5 1 10 1 100 1000
GDZ3V9B 72 3.89 3.9 4.16 5 1 5 1 100 1000
GDZ4V3B 82 4.17 4.3 4.43 5 1 5 1 100 1000
GDZ4V7B 92 4.55 4.7 4.75 5 0.5 2 1 100 800
GDZ5V1B T1 4.98 5.1 5.2 5 0.5 2 1 80 500
GDZ5V6B T2 5.49 5.6 5.73 5 0.5 1 2.5 60 200
GDZ6V2B T3 6.06 6.2 6.33 5 0.5 1 3 60 100
GDZ6V8B T4 6.65 6.8 6.93 5 0.5 0.5 3.5 40 60
GDZ7V5B T5 7.28 7.5 7.6 5 0.5 0.5 4 30 60
GDZ8V2B T6 8.02 8.2 8.36 5 0.5 0.5 5 30 60
GDZ9V1B T7 8.85 9.1 9.23 5 0.5 0.5 6 30 60
GDZ10B T8 9.77 10 10.21 5 0.5 0.1 7 30 60
GDZ11B T9 10.76 11 11.22 5 0.5 0.1 8 30 60
GDZ12B TA 11.74 12 12.24 5 0.5 0.1 9 30 80
GDZ13B TB 12.91 13 13.49 5 0.5 0.1 10 37 80
GDZ15B TC 14.34 15 14.98 5 0.5 0.1 11 42 80
GDZ16B TD 15.85 16 16.51 5 0.5 0.1 12 50 80
GDZ18B TE 17.56 18 18.35 5 0.5 0.1 13 65 80
GDZ20B TH 19.52 20 20.39 5 0.5 0.1 15 85 100
GDZ22B TK 21.54 22 22.47 5 0.5 0.1 17 100 100
GDZ24B TL 23.72 24 24.78 5 0.5 0.1 19 120 120
GDZ27B TM 26.19 27 27.53 5 0.5 0.1 21 150 150
GDZ30B TN 29.19 30 30.69 5 0.5 0.1 23 200 200
GDZ33B TP 32.15 33 33.79 5 0.5 0.1 25 250 250
GDZ36B TT 35.07 36 36.87 5 0.5 0.1 27 300 300
Notes
The Zener voltage V is measured 40 ms after power is supplied
Z
The operating resistance (Z , Z ) are measured by superimposing a 1 kHz alternating current on the regulated current (I ).
Z ZK Z
Rev. 1.8, 27-Feb-13 Document Number: 85766
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000