33 3 H11D1, H11D2, H11D3 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BV Voltage CEO FEATURES Very high collector emitter breakdown voltage BV = 300 V CEO 6 A 1 B Isolation test voltage: 5000 V RMS Low coupling capacitance C 2 5 C High common mode transient immunity NC 3 4 E Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 AGENCY APPROVALS 23109 UL1577 DESIGN SUPPORT TOOLS AVAILABLE cUL1577 DIN EN 60747-5-5 (VDE 0884-5) available with option 1 3D Models Design Tools Related Documents APPLICATIONS DESCRIPTION Telecom The H11Dx has a GaAs infrared emitting diode emitter, Industrial controls which is optically coupled to a silicon planar phototransistor Battery powered equipment detector, and is incorporated in a plastic DIP-6 package. Office machines It features a high current transfer ratio, low coupling Programmable controllers capacitance, and high isolation voltage. The coupling device is designed for signal transmission between two electrically separated circuits. ORDERING INFORMATION H 1 1 D - X 0 PART NUMBER PACKAGE OPTION TAPE AND REEL AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL > 20 DIP-6 H11D1 H11D2 H11D3 (1) SMD-6, option 7 H11D1-X007T H11D2-X007 - (1) SMD-6, option 9 H11D1-X009T -- UL, cUL, VDE > 20 SMD-6, option 7 H11D1-X017T - - Notes Additional options may be possible, please contact sales office (1) Also available in tubes do not put T on the end Rev. 1.9, 18-Jun-2019 Document Number: 83611 1 For technical questions, contact: optocoupler.answers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D H11D1, H11D2, H11D3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Power dissipation P 100 mW diss OUTPUT H11D1 V 300 V CEO Collector emitter voltage H11D2 V 300 V CEO H11D3 V 200 V CEO H11D1 V 300 V CBO Collector base voltage H11D2 V 300 V CBO H11D3 V 200 V CBO Emitter base voltage V 7V EBO Collector current I 50 mA C Power dissipation P 150 mW diss COUPLER Storage temperature range T -55 to +125 C stg Operating temperature range T -55 to +100 C amb Soldering temperature t = 10 s T T 260 C sld sld Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability Axis Title Axis Title 200 10000 70 10000 60 Phototransistor 150 50 1000 1000 40 100 30 IR Diode 100 100 20 50 10 0 10 0 10 0 20406080 100 120 0 20406080 100 120 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V -1.2 1.5 V F F Reverse voltage I = 10 A V 6- - V R R Reverse current V = 6 V I -0.01 10 A R R Capacitance V = 0 V, f = 1 kHz C -30 - pF R I OUTPUT Collector emitter breakdown voltage I = 1 mA, R = 1 M BV 300 - - V CE BE CEO Emitter base breakdown voltage I = 10 A BV 7- - V EB EBO Rev. 1.9, 18-Jun-2019 Document Number: 83611 2 For technical questions, contact: optocoupler.answers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) diss 1st line 2nd line 2nd line I - Forward Current (mA) F 1st line 2nd line