HFA08TB60PbF
Ultrafast, Soft Recovery Diode
V 600 V
R
Ultra fast Recovery
Ultra soft Recovery
V 1.7 V
F(Max)
Very Low IRRM
Very Low Qrr
Qrr 65 nC
Specified at Operating Conditions
Lead-Free
D dt 240 A/s
I (rec)M/
HFA08TB60PbF
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA08TB60PbF is a state of the art ultra fast recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it features a superb combination of characteristics which result in per-
formance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 8 amps per Leg
continuous current, the HFA08TB60PbF is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the ultra fast recovery diode product line features extremely low values
of peak recovery current (IRRM) and does not exhibit any tendency tosnap-of during the tb portion of recovery. The
ultra fast recovery diode features combine to offer designers a rectifier with lower noise and significantly lower switching
losses in both the diode and the switching transistor. These ultra fast recovery diode advantages can help to significantly
reduce snubbing, component count and heat sink sizes. The HFA08TB60PbF is ideally suited for applications in power
supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
HFA08TB60PbF TO-220AC Tube 50 HFA08TB60PbF
Absolute Maximum Ratings
Parameter Max. Units
V Cathode -to Anode Voltage 600 V
R
I @ T = 100C Continuous Forward Current 8.0
F C
I Single Pulse Forward Current 60
FSM A
I Maximum Repetitive Forward Current
24
FRM
P @T = 25C Maximum Power Dissipation 36
D C
W
@T = 100C Maximum Power Dissipation 14
P
D C
T Operating Junction and
J
-55 to + 150 C
T Storage Temperature Range
STG
1
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HFA08TB60PbF
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Cathode Anode Breakdown Voltage 600 I = 100A
BR R
1.4 1.7 I = 8.0A
F See Fig. 1
V
V Max Forward Voltage
FM 1.7 2.1 I = 16A
F
1.4 1.7 I = 8.0A ,T = 125C
F J
0.3 5.0
V =V RatedSee Fig. 2
R R
I Max Reverse Leakage Current A
RM
100 500 T = 125C, V = 0.8 x V Rated
J R R
C Junction Capacitance 10 25 pF V = 200V See Fig. 3
T R
Measured lead to lead 5mm from
L Series Inductance 8.0 nH
S
package body
Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
trr 18 I = 1.0A, dif/dt = 200A/s, V = 30V
F R
trr1 Reverse Recovery Time See Fig. 5 37 55 Tns = 25C
J
trr2 55 90 T = 125C
J
I 3.5 5.0 T = 25C I =8.0A
RRM1 J F
Peak Recovery Current See Fig. 6 A
I 4.5 8.0 T = 125C V =200V
RRM2 J R
Q 65 138 T = 25C di/dt = 200A/s
rr1 J
Reverse Recovery Charge See Fig.7 nC
Q 124 360 T = 125C
rr2 J
di dt1 Peak Rate of Fall of Recovery Current 240 T = 25C
(rec)M/ J
A/s
di dt2 During tb See Fig.8 210 T = 125C
(rec)M/ J
Thermal Resistance
Parameter TyMin. p. Max. Units
T Lead Temperature 300
lead
R Thermal Resistance, Junction to Case 3.5
JC
R Thermal Resistance, Junction to Ambient 62 C/W
JA
R Thermal Resistance, Case to Heat Sink 0.50
CS
2.0 g
Wt Weight
0.07 (oz)
6.0 12 Kg-cm
T Mounting Torque
5.0 10 lbfin
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
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