ILD1615, ILQ1615 Vishay Semiconductors Optocoupler, Phototransistor Output, (Dual, Quad Channel), 110 C Rated FEATURES Dual Channel 1 8 C A Operating temperature from C 2 7 E - 55 C to + 110 C C Identical channel to channel footprint A 3 6 Dual and quad packages feature: E C 4 5 - Reduced board space - Lower pin and parts count A 1 16 C - Better channel to channel CTR match C 2 15 E - Improved common mode rejection A 3 14 C Isolation test voltage, 5300 V Quad Channel RMS C 4 13 E Compliant to RoHS Directive 2002/95/EC and in A 5 12 C accordance to WEEE 2002/96/EC C 6 11 E AGENCY APPROVALS A 7 C 10 UL1577, file no. E52744 system code H, double protection C 8 9 E CSA 93751 BSI IEC 60950 IEC 60065 i179015-1 DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending DESCRIPTION The ILD1615, ILQ1615 are multi-channel 110 C rated phototransistor optocouplers that use GaAs IRLED emiters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 V and a working AC PEAK voltage of 1700 V . RMS The binned min./max. and linear CTR characteristics make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD1615, ILQ1615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specification allow easy worst case interface calculations for both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at I = 1.0 mA. F ORDERING INFORMATION DIP- IL x 1 6 1 5 - 4 PART NUMBER CTR 7.62 mm x = D (Dual) or Q (Quad) BIN DUAL CHANNEL QUAD CHANNEL AGENCY CERTIFIED/PACKAGE CTR (%) UL, CSA, BSI 160 to 320 160 to 320 DIP-8 ILD1615-4 - DIP-16 - ILQ1615-4 Document Number: 82582 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.7, 24-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 ILD1615, ILQ1615 Optocoupler, Phototransistor Output, Vishay Semiconductors (Dual, Quad Channel), 110 C Rated ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage V 6.0 V R Forward current I 60 mA F Surge current I 1.5 A FSM Power dissipation P 100 mW diss Derate linearly from 25 C 1.0 mW/C OUTPUT Collector emitter breakdown voltage BV 70 V CEO Emitter collector breakdown voltage BV 7.0 V ECO I 50 mA C Collector current t < 1.0 ms I 100 mA C Power dissipation P 150 mW diss Derate linearly from 25 C 1.5 mW/C COUPLER Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 110 C amb (1) Soldering temperature 2.0 mm distance from case bottom T 260 C sld Package power dissipation ILD1615 400 mW Derate linearly from 25 C 5.33 mW/C Package power dissipation ILQ1615 500 mW Derate linearly from 25 C 6.67 mW/C Isolation test voltage t = 1.0 s V 5300 V ISO RMS Creepage distance 7.0 mm Clearance distance 7.0 mm 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V 1.0 1.15 1.3 V F F Breakdown voltage I = 10 A V 6.0 30 V R BR Reverse current V = 6.0 V I 0.01 10 A R R Capacitance V = 0 V, f = 1.0 MHz C 25 pF R O OUTPUT Collector emitter capacitance V = 5.0 V, f = 1.0 MHz C 6.8 pF CE CE Collector emitter leakage current V = 10 V I 5.0 100 nA CE CEO Collector emitter breakdown voltage I = 0.5 mA BV 70 V CE CEO Emitter collector breakdown voltage I = 0.1 mA BV 7.0 V E ECO PACKAGE TRANSFER CHARACTERISTICS Channel/channel CTR match I = 10 mA, V = 5.0 V CTRX/CTRY 1 to 1 2 to 1 F CE COUPLER Capacitance (input to output) V = 0 V, f = 1.0 MHz C 0.8 pF IO IO 12 14 Insulation resistance V = 500 V, T = 25 C R 10 10 IO A S Channel to channel isolation 500 V AC Note Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 82582 2 Rev. 1.7, 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000