IRF640S, SiHF640S, SiHF640L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) 200 DS Low-profile through-hole R ( )V = 10 V 0.18 DS(on) GS Available in tape and reel Available Q max. (nC) 70 g Dynamic dV/dt rating Q (nC) 13 gs 150 C operating temperature Available Q (nC) 39 gd Fast switching Configuration Single Fully avalanche rated Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 Note 2 2 D PAK (TO-263) I PAK (TO-262) * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G G D S DESCRIPTION D S G Third generation power MOSFETs from Vishay provide the designer with the best combinations of fast switching, S ruggedized device design, low on-resistance and N-Channel MOSFET cost-effectiveness. 2 The D PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (SiHF640L) is available for low-profile applications. ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a a Lead (Pb)-free and Halogen-free SiHF640S-GE3 SiHF640STRL-GE3 SiHF640STRR-GE3 SiHF640L-GE3 a a Lead (Pb)-free IRF640SPbF IRF640STRLPbF IRF640STRRPbF - Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 20 GS T = 25 C 18 C Continuous Drain Current V at 10 V I GS D T = 100 C 11 A C a, e Pulsed Drain Current I 72 DM Linear Derating Factor 1.0 W/C b, e Single Pulse Avalanche Energy E 580 mJ AS a Avalanche Current I 18 A AR a Repetitive Avalanche Energy E 13 mJ AR T = 25 C 130 C Maximum Power Dissipation P W D T = 25 C 3.1 A c, e Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 2.7 mH, R = 25 , I = 18 A (see fig. 12). DD J g AS c. I 18 A, dI/dt 150 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF640, SiHF640 data and test conditions. S16-0014-Rev. E, 18-Jan-16 Document Number: 91037 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF640S, SiHF640S, SiHF640L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA a (PCB mounted, steady-state) C/W Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.29 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 11 A - - 0.18 DS(on) GS D d Forward Transconductance g V = 50 V, I = 11 A 6.7 - - S fs DS D Dynamic Input Capacitance C - 1300 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 430- pF oss DS d f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -130- rss Total Gate Charge Q -- 70 g I = 18 A, V = 160 V, D DS Gate-Source Charge Q --V = 10 V 13 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --39 gd Turn-On Delay Time t -14 - d(on) Rise Time t -51 - r V = 100 V, I = 18 A, DD D ns b, c R = 9.1 , R = 5.4 , see fig. 10 Turn-Off Delay Time t -4g D 5- d(off) Fall Time t -36- f Gate Input Resistance R f = 1 MHz, open drain 0.5 - 3.6 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 18 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 72 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 18 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 300 610 ns rr b, c T = 25 C, I = 18 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.4 7.1 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses IRF640/SiHF640 data and test conditions. S16-0014-Rev. E, 18-Jan-16 Document Number: 91037 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000