IRF644S, SiHF644S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount 2 Available in tape and reel D PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G Fast switching Available Ease of paralleling D Simple drive requirements G S S Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For PRODUCT SUMMARY example, parts with lead (Pb) terminations are not RoHS-compliant. V (V) 250 Please see the information / tables in this datasheet for details DS R ( )V = 10 V 0.28 DS(on) GS DESCRIPTION Q max. (nC) 68 g Third generation power MOSFETs from Vishay provide the Q (nC) 11 gs designer with the best combination of fast switching, Q (nC) 35 ruggedized device design, low on-resistance and gd cost-effectiveness. Configuration Single 2 The D PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and halogen-free SiHF644S-GE3 SiHF644STRL-GE3 SiHF644STRR-GE3 a a Lead (Pb)-free IRF644SPbF IRF644STRLPbF IRF644STRRPbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 250 DS V Gate-source voltage V 20 GS T = 25 C 14 C Continuous drain current V at 10 V I GS D T = 100 C 8.5 A C a Pulsed drain current I 56 DM Linear derating factor 1.0 W/C e Linear derating factor (PCB mount) 0.025 b Single pulse avalanche energy E 550 mJ AS a Avalanche current I 14 A AR a Repetitive avalanche energy E 13 mJ AR Maximum power dissipation T = 25 C 125 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.1 A c Peak diode recovery dv/dt dv/dt 4.8 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 4.5 mH, R = 25 , I = 14 A (see fig. 12) DD J g AS c. I 14 A, di/dt 150 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0682-Rev. E, 07-Sep-2020 Document Number: 91040 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF644S, SiHF644S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Maximum junction-to-ambient R -40 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 250 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.34 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 8.4 A - - 0.28 DS(on) GS D b Forward transconductance g V = 50 V, I = 8.4 A 6.7 - - S fs DS D Dynamic Input capacitance C - 1300 - iss V = 0 V, GS Output capacitance C -V = 25 V, 330- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -85- rss Total gate charge Q -- 68 g I = 7.9 A, V = 200 V, D DS Gate-source charge Q --V = 10 V 11 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --35 gd Turn-on delay time t -11 - d(on) Rise time t -24 - r V = 125 V, I = 7.9 A, DD D ns b R = 9.1 , R = 8.7 , see fig. 10 Turn-off delay time t -5g D 3- d(off) Fall time t -49- f D Between lead, Gate input resistance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal drain inductance L die contact -7.5 - S S Internal source inductance R f = 1 MHz, open drain 0.3 - 1.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 14 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 56 SM S b Body diode voltage V T = 25 C, I = 14 A, V = 0 V -- 1.8 V SD J S GS Body diode reverse recovery time t - 250 500 ns rr b T = 25 C, I = 7.9 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q -2.3 4.6 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0682-Rev. E, 07-Sep-2020 Document Number: 91040 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000