IRF720, SiHF720 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 400 V DS Available Repetitive avalanche rated R ()V = 10 V 1.8 DS(on) GS RoHS* Fast switching Q (Max.) (nC) 20 g COMPLIANT Q (nC) 3.3 Ease of paralleling gs Q (nC) 11 gd Simple drive requirements Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D Note TO-220AB * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details. G DESCRIPTION S Third generation power MOSFETs from Vishay provide the D S designer with the best combination of fast switching, G ruggedized device design, low on-resistance and N-Channel MOSFET cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF720PbF Lead (Pb)-free SiHF720-E3 IRF720 SnPb SiHF720 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 V DS Gate-Source Voltage V 20 V GS T = 25 C 3.3 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.1 A C a Pulsed Drain Current I 13 DM Linear Derating Factor 0.40 W/C b Single Pulse Avalanche Energy E 190 mJ AS a Repetitive Avalanche Current I 3.3 A AR a Repetitive Avalanche Energy E 5.0 mJ AR Maximum Power Dissipation T = 25 C P 50 W C D c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 30 mH, R = 25 , I = 3.3 A (see fig. 12). DD J g AS c. I 3.3 A, dI/dt 65 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S14-2355-Rev. C, 08-Dec-14 Document Number: 91043 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF720, SiHF720 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -2.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.51 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 -- 100nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.0 A -- 1.8 DS(on) GS D b Forward Transconductance g V = 50 V, I = 2.0 A 1.7 - - S fs DS D Dynamic Input Capacitance C -410 - iss V = 0 V, GS Output Capacitance C -1V = 25 V, 20- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -47- rss Total Gate Charge Q -- 20 g I = 3.3 A, D Gate-Source Charge Q --V = 10 V V = 320 V, 3.3 nC gs GS DS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -10 - d(on) Rise Time t -14 - r V = 200 V, I = 3.3 A DD D ns b Turn-Off Delay Time t -30- R = 18 , R = 56 , see fig. 10 d(off) g D Fall Time t -13- f Between lead, D Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 3.3 S showing the A G integral reverse a Pulsed Diode Forward Current I S -- 13 SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 3.3 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 270 600 ns rr b T = 25 C, I = 3.3 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.4 3.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S14-2355-Rev. C, 08-Dec-14 Document Number: 91043 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000