X-On Electronics has gained recognition as a prominent supplier of IPD530N15N3GBTMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD530N15N3GBTMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD530N15N3GBTMA1 Infineon

IPD530N15N3GBTMA1 electronic component of Infineon
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See Product Specifications
Part No.IPD530N15N3GBTMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO252-3
Datasheet: IPD530N15N3GBTMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.6089 ea
Line Total: USD 1522.25 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.6089

0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 1.4731
10 : USD 1.3211
100 : USD 1.0304
500 : USD 0.8511

0
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 3.2668
3 : USD 2.7911
6 : USD 1.2053
42 : USD 0.785

0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 67
Multiples : 1
67 : USD 1.0222
100 : USD 0.8803
250 : USD 0.8645
500 : USD 0.7863

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Drain Current
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the IPD530N15N3GBTMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD530N15N3GBTMA1 and other electronic components in the MOSFETs category and beyond.

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IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 53 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 21 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant Halogen Free 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 530N15N 530N15N 530N15N 530N15N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 21 A D C T =100C 15 C 2) I T =25C 84 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =18A, R =25W 60 mJ AS D GS V Gate source voltage 20 V GS P T =25C Power dissipation 68 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 2.6 page 1 2013-07-09IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2.2 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 3) - - 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 150 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =35A 2 3 4 GS(th) DS GS D V =120V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =120V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS R V =10V, I =18A Drain-source on-state resistance - 44 53 mW DS(on) GS D V =8V, I =9A - 44 53 GS D R Gate resistance - 2.1 - W G V >2 I R , DS D DS(on)max Transconductance g 11 21 - S fs I =18A D 1) J-STD20 and JESD22 2) See figure 3 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.6 page 2 2013-07-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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