FastIRFET IRF7171MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) Applications and Benefits Ideal for High Performance Isolated Converter V V R DSS GS DS(on) Primary Switch 100V min 20V max 5.3m 10V Optimized for Synchronous Rectification RoHS Compliant, Halogen Free Q Q V g tot gd gs(th) Lead-Free (Qualified up to 260C Reflow) 36nC 13nC 2.9V Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) S Dual Sided Cooling Compatible DDG S Compatible with existing Surface Mount Techniques Industrial Qualified DirectFET ISOMETRIC MN Applicable DirectFET Outline and Substrate Outline MN Description The IRF7171MTRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth- ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7171MTRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Ordering Information Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRF7171MTRPbF DirectFET Medium Can Tape and Reel 4800 IRF7171MTRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 93 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 59 D C GS A I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 15 D A GS I Pulsed Drain Current 330 DM E Single Pulse Avalanche Energy 86 mJ AS I Avalanche Current 56 A AR 18.0 40 I = 56A D V = 6V GS VGS = 7V 15.0 30 VGS = 8V VGS = 10V VGS = 12V 12.0 20 T = 125C J 9.0 10 T = 25C J 6.0 0 3.0 0 25 50 75 100 125 150 175 200 4 6 8 10 12 14 16 18 20 I , Drain Current (A) V Gate -to -Source Voltage (V) D GS, Fig 2. Typical On-Resistance vs. Drain Current Fig 1. Typical On-Resistance vs. Gate Voltage Notes TC measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 55H, R = 50 , I = 56A. J G AS Surface mounted on 1 in. square Cu board, steady state. 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 25, 2015 R , Drain-to -Source On Resistance (m ) DS(on) Typical R (m DS(on) IRF7171MTRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 40 mV/C Reference to 25C, I = 1mA V /T DSS J D R Static Drain-to-Source On-Resistance 5.3 6.5 m V = 10V, I = 56A DS(on) GS D V Gate Threshold Voltage 2.0 3.6 V GS(th) V = V , I = 150A DS GS D V /T Gate Threshold Voltage Temp. Coefficient -6.2 mV/C GS(th) J I Drain-to-Source Leakage Current 1 A V = 80 V, V = 0V DSS DS GS Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 80 S V = 10V, I =56A DS D Q Total Gate Charge 36 54 g Q Pre Vth Gate-to-Source Charge 6.9 V = 50V gs1 DS Q Post Vth Gate-to-Source Charge 2.4 V = 10V gs2 GS nC Q Gate-to-Drain Charge 13 I = 56A gd D Q Gate Charge Overdrive 13.7 See Fig.8 godr Q Switch Charge (Q Q 15.4 sw gs2 + gd) Q Output Charge 120 nC V = 50V, V = 0V oss DS GS R Gate Resistance 1.0 G t Turn-On Delay Time 9.3 V = 50V, V = 10V d(on) DD GS t Rise Time 27 I = 56A r D ns t Turn-Off Delay Time 15 R = 1.8 d(off) G t Fall Time 20 f C Input Capacitance 2160 V = 0V iss GS C Output Capacitance 970 V = 50V oss DS C Reverse Transfer Capacitance 60 = 1.0MHz rss pF C Output Capacitance 4660 V = 0V, V = 1.0V, =1.0MHz oss GS DS C Output Capacitance 580 V = 0V, V = 80V, =1.0MHz oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D Continuous Source Current MOSFET symbol I 95 S (Body Diode) showing the G A Pulsed Source Current integral reverse S I 330 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 56A, V = 0V SD J S GS t Reverse Recovery Time 66 ns T = 25C, I = 56A, V = 50V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 126 nC rr Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2% 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 25, 2015