IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 400 DS Definition R (Max.) ( )V = 10 V 1.0 DS(on) GS Low Gate Charge Q Results in Simple Drive g Requirement Q (Max.) (nC) 22 g Improved Gate, Avalanche and Dynamic dV/dt Q (nC) 5.8 gs Ruggedness Q (nC) 9.3 gd Fully Characterized Capacitance and Avalanche Voltage Configuration Single and Current D Effective C Specified oss Compliant to RoHS Directive 2002/95/EC 2 2 I PAK (TO-262) D PAK (TO-263) APPLICATIONS Switch Mode Power Supply (SMPS) G G Uninterruptible Power Supply D S D S High Sspeed Power Switching G S TYPICAL SMPS TOPOLOGIES N-Channel MOSFET Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both US Line Input Only) ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a a Lead (Pb)-free and Halogen-free SiHF730AS-GE3 SiHF730ASTRR-GE3 SiHF730AL-GE3 SiHF730ASTRL-GE3 a a IRF730ASPbF IRF730ASTRLPbF IRF730ASTRRPbF IRF730ALPbF Lead (Pb)-free a a SiHF730AS-E3 SiHF730ASTL-E3 SiHF730ASTR-E3 SiHF730AL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 30 GS T = 25 C 5.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.5 A C a, e Pulsed Drain Current I 22 DM Linear Derating Factor 0.6 W/C b, e Single Pulse Avalanche Energy E 290 mJ AS a Avalanche Current I 5.5 A AR a Repetiitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C P 74 W C D c, e Peak Diode Recovery dV/dt dV/dt 4.6 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 19 mH, R = 25 , I = 5.5 A (see fig. 12). J g AS c. I 5.5 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF730A, SiHF730A data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91046 www.vishay.com S11-1048-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 a thJA (PCB Mounted, steady-state) C/W Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 400 - - V DS GS D d V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.5 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 3.3 A -- 1.0 DS(on) GS D d Forward Transconductance g V = 50 V, I = 3.3 A 3.1 - - S fs DS D Dynamic Input Capacitance C - 600 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 103- pF oss DS d f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -4.0- rss V = 1.0 V, f = 1.0 MHz - 890 - DS Output Capacitance C oss V = 0 V V = 320 V, f = 1.0 MHz - 30 - GS DS c, d Effective Output Capacitance C eff. V = 0 V to 320 V -45 - oss DS Total Gate Charge Q -- 22 g I = 3.5 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 5.8 nC gs GS b, d see fig. 6 and 13 Gate-Drain Charge Q --9.3 gd Turn-On Delay Time t -10 - d(on) Rise Time t -22 - r V = 200 V, I = 3.5 A, DD D ns b, d R = 12 , R = 57 , see fig. 10 g D Turn-Off Delay Time t -20- d(off) Fall Time t -16- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 5.5 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 22 SM S b Body Diode Voltage V T = 25 C, I = 5.5 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 370 550 ns rr b, d T = 25 C, I = 3.5 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.6 2.4 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS d. Uses IRF730A, SiHF730A data and test conditions. www.vishay.com Document Number: 91046 2 S11-1048-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000