PD -91703A
IRF7341
HEXFET Power MOSFET
Generation V Technology
Ultra Low On-Resistance
1 8
S1 D1
Dual N-Channel Mosfet
7 V = 55V
2 DSS
Surface Mount G1 D1
Available in Tape & Reel 3
6
S2 D2
Dynamic dv/dt Rating
4 5
D2
G2
Fast Switching R = 0.050
DS(on)
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
SO-8
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
V Drain- Source Voltage 55 V
DS
I @ T = 25C Continuous Drain Current, V @ 10V 4.7
D C GS
I @ T = 70C Continuous Drain Current, V @ 10V 3.8 A
D C GS
I Pulsed Drain Current 38
DM
P @T = 25C Power Dissipation 2.0
D C
P @T = 70C Power Dissipation 1.3
D C
Linear Derating Factor 0.016 W/C
V Gate-to-Source Voltage 20 V
GS
V Gate-to-Source Voltage Single Pulse tp<10s 30 V
GSM
E Single Pulse Avalanche Energy 72
AS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T T Junction and Storage Temperature Range -55 to + 150 C
J, STG
Thermal Resistance
Parameter Typ. Max. Units
R Maximum Junction-to-Ambient 62.5 C/W
JA
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IRF7341
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.059 V/C Reference to 25C, I = 1mA
(BR)DSS J D
0.043 0.050 V = 10V, I = 4.7A
GS D
0.056 0.065 V = 4.5V, I = 3.8A
GS D
V Gate Threshold Voltage 1.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 7.9 S V = 10V, I = 4.5A
fs DS D
2.0 V = 55V, V = 0V
DS GS
25 V = 55V, V = 0V, T = 55C
DS GS J
Gate-to-Source Forward Leakage -100 V = -20V
GS
Gate-to-Source Reverse Leakage 100 V = 20V
GS
Q Total Gate Charge 24 36 I = 4.5A
g D
Q Gate-to-Source Charge 2.3 3.4 nC V = 44V
gs DS
Q Gate-to-Drain Mille) Charge 7.0 10 V = 10V, See Fig. 10
gd GS
t Turn-On Delay Time 8.3 12 V = 28V
d(on) DD
t Rise Time 3.2 4.8 I = 1.0A
r D
t Turn-Off Delay Time 32 48 R = 6.0
d(off) G
t Fall Time 13 20 R = 28,
f D
C Input Capacitance 740 V = 0V
iss GS
C Output Capacitance 190 pF V = 25V
oss DS
C Reverse Transfer Capacitance 71 = 1.0MHz, See Fig. 9
rss
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
(Body Diode) showing the
G
I Pulsed Source Current integral reverse
SM
(Body Diode) p-n junction diode. S
V Diode Forward Voltage 1.2 V T = 25C, I = 2.0A, V = 0V
SD J S GS
t Reverse Recovery Time 60 90 ns T = 25C, I = 2.0A
rr J F
Q Reverse RecoveryCharge 120 170 nC di/dt = -100A/s
rr
Notes:
Repetitive rating; pulse width limited by
I 4.7A, di/dt 220A/s, V V ,
SD DD (BR)DSS
max. junction temperature. ( See fig. 11 )
T 150C
J
Starting T = 25C, L = 6.5mH Pulse width 300s; duty cycle 2%.
J
R = 25, I = 4.7A. (See Figure 8)
G AS
When mounted on 1 inch square copper board, t<10 sec
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