HEXFET Power MOSFET Advanced Process Technology V R max I DSS DS(on) D Dual N-Channel MOSFET Ultra Low On-Resistance 55V 0.050 V = 10V 5.1A GS 175C Operating Temperature 0.065 V = 4.5V 4.42A GS Repetitive Avalanche Allowed up to Tjmax Lead-Free Description 1 8 S1 D1 These HEXFET Power MOSFETs in a Dual SO-8 package 2 7 utilize the lastest processing techniques to achieve extremely G1 D1 low on-resistance per silicon area. Additional features of these 3 6 S2 D2 HEXFET Power MOSFETs are a 175C junction operating temperature, fast switching speed and improved repetitive 4 5 G2 D2 avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide SO-8 variety of other applications. Top View The 175C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity Tube/Bulk 95 IRF7341GPbF IRF7341GPbF SO-8 Tape and Reel 4000 IRF7341GTRPbF Absolute Maximum Ratings Parameter Max. Units V Drain-Source Voltage 55 V DS I T = 25C Continuous Drain Current, V 10V 5.1 D A GS I T = 70C Continuous Drain Current, V 10V 4.2 A D A GS I Pulsed Drain Current 42 DM P T = 25C Maximum Power Dissipation 2.4 W D A P T = 70C Maximum Power Dissipation 1.7 W D A Linear Derating Factor 16 mW/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 140 mJ AS I Avalanche Current 5.1 A AR E Repetitive Avalanche Energy See Fig. 14, 15, 16 mJ AR T , T Junction and Storage Temperature Range -55 to + 175 C J STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 62.5 C/W JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.043 0.050 V = 10V, I = 5.1A GS D R Static Drain-to-Source On-Resistance DS(on) 0.056 0.065 V = 4.5V, I = 4.42A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250 A GS(th) DS GS D g Forward Transconductance 10.4 S V = 10V, I = 5.2A fs DS D 2.0 V = 44V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 25 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 29 44 I = 5.2A g D Q Gate-to-Source Charge 2.9 4.4 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 7.3 11 V = 10V gd GS t Turn-On Delay Time 9.2 V = 28V d(on) DD t Rise Time 7.7 I = 1.0A r D t Turn-Off Delay Time 31 R = 6.0 d(off) G t Fall Time 12.5 V = 10V f GS C Input Capacitance 780 V = 0V iss GS C Output Capacitance 190 pF V = 25V oss DS C Reverse Transfer Capacitance 66 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.4 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 42 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 2.6A, V = 0V SD J S GS t Reverse Recovery Time 51 77 ns T = 25C, I = 2.6A rr J F Q Reverse Recovery Charge 76 114 nC di/dt = 100A/ s rr Repetitive rating pulse width limited by Surface mounted on FR-4 board, 10sec max. junction temperature. Pulse width 300 s duty cycle