PD - 9.1244C IRF7401 HEXFET Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance V = 20V DSS 2 7 N-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D R = 0.022 Dynamic dv/dt Rating DS(on) Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Max. Units I T = 25C 10 Sec. Pulsed Drain Current, V 4.5V 10 D A GS I T = 25C Continuous Drain Current, V 4.5V 8.7 D A GS A I T = 70C Continuous Drain Current, V 4.5V 7.0 D A GS I Pulsed Drain Current 35 DM P T = 25C Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 12 V GS dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Ratings Parameter Typ. Max. Units R Maximum Junction-to-Ambient 50 JA C/W 02/13/01IRF7401 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 VV = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.044 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.022 V = 4.5V, I = 4.1A GS D R Static Drain-to-Source On-Resistance DS(ON) 0.030 V = 2.7V, I = 3.5A GS D V Gate Threshold Voltage 0.70 VV = V , I = 250A GS(th) DS GS D g Forward Transconductance 11 SV = 15V, I = 4.1A fs DS D 1.0 V = 16V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 25 V = 16V, V = 0V, T = 125 C DS GS J Gate-to-Source Forward Leakage 100 V = 12V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -12V GS Q Total Gate Charge 48 I = 4.1A g D Q Gate-to-Source Charge 5.1 nC V = 16V gs DS Q Gate-to-Drain Mille) Charge 20 V = 4.5V, See Fig. 6 and 12 gd GS t Turn-On Delay Time 13 V = 10V d(on) DD t Rise Time 72 I = 4.1A r D ns t Turn-Off Delay Time 65 R = 6.0 d(off) G t Fall Time 92 R = 2.4, See Fig. 10 f D D L Internal Drain Inductance 2.5 D Between lead tip nH G and center of die contact L Internal Source Inductance 4.0 S S C Input Capacitance 1600 V = 0V iss GS C Output Capacitance 690 pF V = 15V oss DS C Reverse Transfer Capacitance 310 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 3.1 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 35 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.0 V T = 25C, I = 2.0A, V = 0V SD J S GS t Reverse Recovery Time 39 59 ns T = 25C, I = 4.1A rr J F Q Reverse RecoveryCharge 42 63 nC di/dt = 100A/s rr t Forward Turn-On Time on Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) I 4.1A, di/dt 100A/s, V V , Surface mounted on FR-4 board, t 10sec. SD DD (BR)DSS T 150C J