IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q results in Simple Drive g V (V) 400 DS Available Requirement R ()V = 10 V 1.0 DS(on) GS RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Q (Max.) (nC) 22 Ruggedness g Q (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage gs and Current Q (nC) 9.3 gd Effective Coss Specified Configuration Single Compliant to RoHS Directive 2002/95/EC D APPLICATIONS TO-220AB Switch Mode Power Supply (SMPS) Uninterruptible Power Supply G High Speed Power Switching S TYPICAL SMPS TOPOLOGIES D S G Single Transistor Flyback Xfmr. Reset N-Channel MOSFET Single Transistor Forward Xfmr. Reset (Both US Line Input Only) ORDERING INFORMATION Package TO-220AB IRF730APbF Lead (Pb)-free SiHF730A-E3 IRF730A SnPb SiHF730A ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 30 GS T = 25 C 5.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.5 A C a Pulsed Drain Current I 22 DM Linear Derating Factor 0.6 W/C b Single Pulse Avalanche Energy E 290 mJ AS a Repetitive Avalanche Current I 5.5 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C P 74 W C D c Peak Diode Recovery dV/dt dV/dt 4.6 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 19 mH, R = 25 , I = 5.5 A (see fig. 12). J g AS c. I 5.5 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91045 www.vishay.com S11-0508-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF730A, SiHF730A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Case (Drain) R -1.70 thJC Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Ambient R -62 thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V /T -0.5 - V/C V Temperature Coefficient Reference to 25 C, I = 1 mA DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 3.3 A -- 1.0 DS(on) GS D Forward Transconductance g V = 50 V, I = 3.3 A 3.1 - - S fs DS D Dynamic V = 0 V, Input Capacitance C - 600 - GS iss Output Capacitance C -V = 25 V, 103- oss DS Reverse Transfer Capacitance C -4f = 1.0 MHz, see fig. 5 .0- rss pF V = 1.0 V, f = 1.0 MHz - 890 - DS Output Capacitance C oss V = 0 V V = 320 V, f = 1.0 MHz - 30 - GS DS c Effective Output Capacitance C eff. V = 0 V to 320 V -45 - oss DS Total Gate Charge Q -- 22 g I = 3.5 A, V = 320 V D DS Gate-Source Charge Q --V = 10 V 5.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --9.3 gd Turn-On Delay Time t -10 - d(on) V = 200 V, I = 3.5 A Rise Time t -22 - r DD D ns R = 12 , R = 57 , g D Turn-Off Delay Time t -20- d(off) b see fig. 10 Fall Time t -16- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 5.5 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 22 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 5.5 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 370 550 ns rr b T = 25 C, I = 3.5 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.6 2.4 C rr Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91045 2 S11-0508-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000