PD - 94372C IRF7338 HEXFET Power MOSFET Ultra Low On-Resistance N-CHANNEL MOSFET N-Ch P-Ch 1 8 S1 D1 Dual N and P Channel MOSFET 2 7 Surface Mount G1 D1 V 12V -12V DSS Available in Tape & Reel 3 6 S2 D2 4 5 G2 D2 P-CHANNEL MOSFET R 0.034 0.150 DS(on) Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique Absolute Maximum Ratings Max. N-Channel P-Channel V Drain-to-Source Voltage 12 -12 DS I T = 25C Continuous Drain Current, V 4.5V 6.3 -3.0 D A GS I T = 70C Continuous Drain Current, V 4.5V 5.2 -2.5 D A GS I Pulsed Drain Current 26 -13 DM P T = 25C Power Dissipation 2.0 W D A P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 16 mW/C V Gate-to-Source Voltage 12 8.0 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 62.5 C/W JA www.irf.com 1 6/2/03 Parameter Min. Typ. Max. Units Conditions N-Ch 12 V = 0V, I = 250A GS D V Drain-to-Source Breakdown Voltage (BR)DSS P-Ch -12 V = 0V, I = -250A GS D N-Ch 0.01 Reference to 25C, I = 1mA D V /T Breakdown Voltage Temp. Coefficient (BR)DSS J P-Ch -0.01 Reference to 25C, I = -1mA D 0.034 V = 4.5V, I = 6.0A GS D N-Ch 0.060 V = 3.0V, I = 2.0A GS D R Static Drain-to-Source On-Resistance DS(ON) 0.150 V = -4.5V, I = -2.9A GS D P-Ch 0.200 V = -2.7V, I = -1.5A GS D N-Ch 0.6 1.5 V = V , I = 250A DS GS D V Gate Threshold Voltage GS(th) P-Ch -0.40 -1.0 V = V , I = -250A DS GS D N-Ch 9.2 V = 6.0V, I = 6.0A DS D g Forward Transconductance fs P-Ch 3.5 V = -6.0V, I = -1.5A DS D N-Ch 20 V = 9.6V, V = 0V DS GS P-Ch -1.0 V = -9.6 V, V = 0V DS GS I Drain-to-Source Leakage Current DSS N-Ch 50 V = 9.6V, V = 0V, T = 55C DS GS J P-Ch -25 V = -9.6V, V = 0V, T = 55C DS GS J I Gate-to-Source Forward Leakage N-Ch 100 nA V = 12V GSS GS P-Ch 100 V = 8.0V GS N-Ch 8.6 Q Total Gate Charge g N-Channel P-Ch 6.6 I = 6.0A, V = 6.0V, V = 4.5V D DS GS N-Ch 1.9 Q Gate-to-Source Charge gs P-Ch 1.3 P-Channel N-Ch 3.9 Q Gate-to-Drain Mille) Charge gd I = -2.9A, V = -9.6V, V = -4.5 V D DS GS P-Ch 1.6 N-Ch 6.0 t Turn-On Delay Time d(on) N-Channel P-Ch 9.6 V = 6.0V, I = 1.0A, R = 6.0, DD D G N-Ch 7.6 t Rise Time r V = 4.5V GS P-Ch 13 N-Ch 26 t Turn-Off Delay Time d(off) P-Channel P-Ch 27 V = -6.0V, I = -2.9A, R = 6.0 DD D G N-Ch 34 t Fall Time f V = -4.5V GS P-Ch 25 N-Ch 640 C Input Capacitance N-Channel iss P-Ch 490 V = 0V, V = 9.0V, = 1.0MHz GS DS N-Ch 340 C Output Capacitance oss P-Ch 80 P-Channel N-Ch 110 C Reverse Transfer Capacitance V = 0V, V = -9.0V, = 1.0KHz rss GS DS P-Ch 58 Parameter Min. Typ. Max. Units Conditions N-Ch 6.3 I Continuous Source Current (Body Diode) S P-Ch -3.0 N-Ch 26 I Pulsed Source Current (Body Diode) SM P-Ch -13 N-Ch 1.3 T = 25C, I = 1.7A, V = 0V J S GS V Diode Forward Voltage P-Ch -1.2 T = 25C, I = -2.9A, V = 0V SD J S GS N-Ch 51 76 N-Channel t Reverse Recovery Time P-Ch 37 56 T = 25C, I = 1.7A, di/dt = 100A/s rr J F N-Ch 43 64 P-Channel Q Reverse Recovery Charge T = 25C, I = -2.9A, di/dt = -100A/s P-Ch 20 30 rr J F Notes: Surface mounted on 1 in square Cu board. Repetitive rating pulse width limited by max. junction temperature. The N-channel MOSFET can withstand 15V V max GS Pulse width 400s duty cycle 2%. for up to 24 hours over the life of the device. 2 www.irf.com