PD - 95298 IRF7322D1PbF FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 and Schottky Diode A K V = -20V DSS Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET R = 0.058 3 6 DS(on) S D Low V Schottky Rectifier F 4 5 G D Generation 5 Technology Schottky Vf = 0.39V SO-8 Footprint Top View Lead-Free Description The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable SO-8 electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings (T = 25C unless otherwise noted) A Parameter Maximum Units I T = 25C Continuous Drain Current, V -4.5V -5.3 A D A GS I T = 70C -4.3 D A I Pulsed Drain Current -43 DM P T = 25C Power Dissipation 2.0 W D A P T = 70C 1.3 D A Linear Derating Factor 16 mW/C V Gate-to-Source Voltage 12 V GS dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T T Junction and Storage Temperature Range -55 to +150 C J, STG Thermal Resistance Ratings Parameter Maximum Units R Junction-to-Ambient 62.5 C/W JA Notes: Repetitive rating pulse width limited by maximum junction temperature (see figure 9) I -2.9A, di/dt -77A/s, V V , T 150C SD DD (BR)DSS J Pulse width 300s duty cycle 2% Surface mounted on FR-4 board, t 10sec www.irf.com 1 10/12/04 IRF7322D1PbF MOSFET Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A (BR)DSS GS D R Static Drain-to-Source On-Resistance 0.049 0.062 V = -4.5V, I = -2.9A GS D DS(on) 0.082 0.098 V = -2.7V, I = -1.5A GS D V Gate Threshold Voltage -0.70 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 5.9 S V = -10V, I = -1.5A fs DS D I Drain-to-Source Leakage Current -1.0 V = -16V, V = 0V DS GS DSS A -25 V = -16V, V = 0V, T = 55C DS GS J I Gate-to-Source Forward Leakage 100 V = -12.0V GSS GS nA Gate-to-Source Reverse Leakage -100 V = 12.0V GS Q Total Gate Charge 19 29 I = -2.9A g D Q Gate-to-Source Charge 4.0 6.1 nC V = -16V gs DS Q Gate-to-Drain Mille) Charge 7.7 12 V = -4.5V (see figure 6) gd GS t Turn-On Delay Time 15 22 V = -10V d(on) DD t Rise Time 40 60 I = -2.9A r D ns t Turn-Off Delay Time 42 63 R = 6.0 d(off) G t Fall Time 49 73 R = 3.4 f D C Input Capacitance 780 V = 0V iss GS C Output Capacitance 470 pF V = -15V oss DS C Reverse Transfer Capacitance 240 = 1.0MHz (see figure 5) rss MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current (Body Diode) -2.5 A S I Pulsed Source Current (Body Diode) -21 SM V Body Diode Forward Voltage -1.2 V T = 25C, I = -2.9A, V = 0V SD J S GS t Reverse Recovery Time (Body Diode) 47 71 ns T = 25C, I = -2.9A rr J F Q Reverse Recovery Charge 49 73 nC di/dt = 100A/s rr Schottky Diode Maximum Ratings Parameter Max. Units. Conditions I Max. Average Forward Current 2.7 50% Duty Cycle. Rectangular Wave, T = 25C F(av) A See Fig. 14 2 T = 70C A I Max. peak one cycle Non-repetitive 120 5s sine or 3s Rect. pulse Following any rated SM Surge current 11 10ms sine or 6ms Rect. pulse load condition & with V applied RRM Schottky Diode Electrical Specifications Parameter Max. Units Conditions V Max. Forward voltage drop 0.50 I = 1.0A, T = 25C FM F J 0.62 I = 2.0A, T = 25C F J V 0.39 I = 1.0A, T = 125C F J 0.57 I = 2.0A, T = 125C . F J I Max. Reverse Leakage current 0.02 V = 20V T = 25C RM R J mA 8 T = 125C J C Max. Junction Capacitance 92 pF V = 5Vdc ( 100kHz to 1 MHz) 25C t R dv/dt Max. Voltage Rate of Charge 3600 V/ s Rated V R 2 www.irf.com