IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 10.6 m W DS(on),max I -50 A D Features PG-TO252-3-313 P-channel - Logic Level - Enhancement mode Tab AEC qualified MSL1 up to 260C peak reflow 1 3 175C operating temperature Green Product (RoHS compliant) Source pin 3 100% Avalanche tested Gate Intended for reverse battery protection pin 1 Type Package Marking Drain pin 2/Tab IPD50P04P4L-11 PG-TO252-3-313 4P04L11 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit T =25C, C Continuous drain current I -50 A D 1) V =-10V GS T =100C, C -40 2) V =-10V GS 2) I T =25C -200 Pulsed drain current D,pulse C E I =-25A Avalanche energy, single pulse 18 mJ AS D Avalanche current, single pulse I - -50 A AS Gate source voltage V - +5/-16 V GS P T =25C Power dissipation 58 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2019-07-04IPD50P04P4L-11 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 2.6 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = -1mA Drain-source breakdown voltage -40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-85A -1.2 -1.7 -2.2 GS(th) DS GS D V =-32V, V =0V, DS GS Zero gate voltage drain current I - -0.03 -1 A DSS T =25C j V =-32V, V =0V, DS GS - -7 -70 2) T =125C j Gate-source leakage current I V =-16V, V =0V - - -100 nA GSS GS DS R V =-4.5V, I =-30A Drain-source on-state resistance - 12.3 17.2 m W DS(on) GS D V =-10V, I =-50A - 8.2 10.6 GS D Rev. 1.1 page 2 2019-07-04