X-On Electronics has gained recognition as a prominent supplier of IRF6617TR1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF6617TR1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF6617TR1 Infineon

IRF6617TR1 electronic component of Infineon
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Part No.IRF6617TR1
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 14A 7-Pin Direct-FET ST T/R
Datasheet: IRF6617TR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.1769 ea
Line Total: USD 176.9 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.4361

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.1769

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF6617TR1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF6617TR1 and other electronic components in the MOSFETs category and beyond.

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IRF6617 DirectFET Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters V R max Qg(typ.) DSS DS(on) Low Conduction Losses 30V 8.1m V = 10V 11nC GS Low Switching Losses 10.3m V = 4.5V GS Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with Existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT Description TM The IRF6617 combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth- ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv- ing previous best thermal resistance by 80%. The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are critical in synchronous buck converters including R and gate charge to minimize losses in the control FET socket. DS(on) Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 30 V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 55 I T = 25C D C GS I T = 25C Continuous Drain Current, V 10V 14 A GS D A 11 I T = 70C Continuous Drain Current, V 10V GS D A 120 I Pulsed Drain Current DM P T = 25C Power Dissipation 42 D C P T = 25C Power Dissipation 2.1 W D A 1.4 P T = 70C Power Dissipation A D E Single Pulse Avalanche Energy 27 mJ AS I Avalanche Current 12 A AR 0.017 Linear Derating Factor W/C -40 to + 150 T Operating Junction and C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R JA Junction-to-Ambient 58 R Junction-to-Ambient 12.5 JA R Junction-to-Ambient 20 C/W JA R Junction-to-Case 3.0 JC R Junction-to-PCB Mounted 1.0 J-PCB Notes through are on page 2 www.irf.com 1 11/3/05 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 25 mV/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 6.2 8.1 m V = 10V, I = 15A DS(on) GS D 7.9 10.3 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.35 2.35 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.4 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 39 S V = 15V, I = 12A DS D Q Total Gate Charge 11 17 g Q Pre-Vth Gate-to-Source Charge 3.1 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.0 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 4.0 I = 12A gd D Q Gate Charge Overdrive 2.9 See Fig. 16 godr Q Switch Charge (Q + Q ) 5.0 sw gs2 gd Q Output Charge 10 nC V = 15V, V = 0V oss DS GS t Turn-On Delay Time 11 V = 16V, V = 4.5V d(on) DD GS t Rise Time 34 I = 12A r D t Turn-Off Delay Time 12 ns Clamped Inductive Load d(off) t Fall Time 3.7 f C Input Capacitance 1300 V = 0V iss GS C Output Capacitance 430 pF V = 15V oss DS C Reverse Transfer Capacitance 160 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 53 MOSFET symbol D S (Body Diode) A showing the G I Pulsed Source Current 120 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.81 1.0 V T = 25C, I = 12A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 12A rr J F Q Reverse Recovery Charge 7.2 11 nC di/dt = 100A/s rr Used double sided cooling, mounting pad. Repetitive rating pulse width limited by max. junction temperature. Mounted on minimum footprint full size board with metalized Starting T = 25C, L = 0.40mH, back and with small clip heatsink. J R = 25, I = 12A. T measured with thermal couple mounted to top (Drain) of part. G AS C Pulse width 400s duty cycle 2%. R is measured at Surface mounted on 1 in. square Cu board. 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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