IRF6617 DirectFET Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters V R max Qg(typ.) DSS DS(on) Low Conduction Losses 30V 8.1m V = 10V 11nC GS Low Switching Losses 10.3m V = 4.5V GS Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with Existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT Description TM The IRF6617 combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth- ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv- ing previous best thermal resistance by 80%. The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are critical in synchronous buck converters including R and gate charge to minimize losses in the control FET socket. DS(on) Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 30 V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 55 I T = 25C D C GS I T = 25C Continuous Drain Current, V 10V 14 A GS D A 11 I T = 70C Continuous Drain Current, V 10V GS D A 120 I Pulsed Drain Current DM P T = 25C Power Dissipation 42 D C P T = 25C Power Dissipation 2.1 W D A 1.4 P T = 70C Power Dissipation A D E Single Pulse Avalanche Energy 27 mJ AS I Avalanche Current 12 A AR 0.017 Linear Derating Factor W/C -40 to + 150 T Operating Junction and C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R JA Junction-to-Ambient 58 R Junction-to-Ambient 12.5 JA R Junction-to-Ambient 20 C/W JA R Junction-to-Case 3.0 JC R Junction-to-PCB Mounted 1.0 J-PCB Notes through are on page 2 www.irf.com 1 11/3/05 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 25 mV/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 6.2 8.1 m V = 10V, I = 15A DS(on) GS D 7.9 10.3 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.35 2.35 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.4 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 39 S V = 15V, I = 12A DS D Q Total Gate Charge 11 17 g Q Pre-Vth Gate-to-Source Charge 3.1 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.0 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 4.0 I = 12A gd D Q Gate Charge Overdrive 2.9 See Fig. 16 godr Q Switch Charge (Q + Q ) 5.0 sw gs2 gd Q Output Charge 10 nC V = 15V, V = 0V oss DS GS t Turn-On Delay Time 11 V = 16V, V = 4.5V d(on) DD GS t Rise Time 34 I = 12A r D t Turn-Off Delay Time 12 ns Clamped Inductive Load d(off) t Fall Time 3.7 f C Input Capacitance 1300 V = 0V iss GS C Output Capacitance 430 pF V = 15V oss DS C Reverse Transfer Capacitance 160 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 53 MOSFET symbol D S (Body Diode) A showing the G I Pulsed Source Current 120 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.81 1.0 V T = 25C, I = 12A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 12A rr J F Q Reverse Recovery Charge 7.2 11 nC di/dt = 100A/s rr Used double sided cooling, mounting pad. Repetitive rating pulse width limited by max. junction temperature. Mounted on minimum footprint full size board with metalized Starting T = 25C, L = 0.40mH, back and with small clip heatsink. J R = 25, I = 12A. T measured with thermal couple mounted to top (Drain) of part. G AS C Pulse width 400s duty cycle 2%. R is measured at Surface mounted on 1 in. square Cu board. 2 www.irf.com