IRF6714MPbF IRF6714MTRPbF DirectFET Power MOSFET RoHs Compliant and Halogen Free Low Profile (<0.6 mm) V V R R DSS GS DS(on) DS(on) Dual Sided Cooling Compatible 25V max 20V max 1.6m 10V 2.6m 4.5V Ultra Low Package Inductance Optimized for High Frequency Switching Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Ideal for CPU Core DC-DC Converters 29nC 8.3nC 4.1nC 36nC 23nC 1.9V Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) MX SQ SX ST MQ MT MP Description TM The IRF6714MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 25 DS V 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 29 I T = 25C GS D A I T = 70C Continuous Drain Current, V 10V 23 GS D A A Continuous Drain Current, V 10V 166 I T = 25C C GS D I Pulsed Drain Current 234 DM E 175 Single Pulse Avalanche Energy mJ AS I 23 AR Avalanche Current A 5 14 I = 23A I = 29A D 12 D V = 20V DS 4 V = 13V 10 DS 3 8 T = 125C 6 2 J 4 1 T = 25C 2 J 0 0 2 4 6 8 10 12 14 16 18 20 0 1020 30405060 7080 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.651mH, R = 25, I = 23A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 04/29/09 Typical R (m ) DS(on) , Ga V te-to-Source Voltage (V) G S Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 25 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 18 mV/C D DSS J R V = 10V, I = 29A Static Drain-to-Source On-Resistance 1.6 2.1 DS(on) GS D m V = 4.5V, I = 23A 2.6 3.4 GS D V Gate Threshold Voltage 1.4 1.9 2.4 V GS(th) V = V , I = 100A DS GS D V /T Gate Threshold Voltage Coefficient -6.5 mV/C GS(th) J V = 20V, V = 0V I Drain-to-Source Leakage Current 1.0 DS GS DSS A V = 20V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 GS GSS nA V = -20V Gate-to-Source Reverse Leakage -100 GS V = 13V, I = 23A gfs Forward Transconductance 122 S DS D Q Total Gate Charge 29 44 g = 13V Q Pre-Vth Gate-to-Source Charge 9.0 V DS gs1 Q V = 4.5V Post-Vth Gate-to-Source Charge 4.1 gs2 GS nC Q I = 23A Gate-to-Drain Charge 8.3 gd D Q Gate Charge Overdrive 8.1 See Fig. 15 godr Q Switch Charge (Q + Q ) 12 sw gs2 gd V = 16V, V = 0V Q Output Charge 23 nC DS GS oss R Gate Resistance 1.2 2.2 G V = 13V, V = 4.5V t Turn-On Delay Time 18 DD GS d(on) t I = 23A Rise Time 26 r D ns t R = 1.8, R = 0.54 Turn-Off Delay Time 13 d(off) G D t Fall Time 9.6 See Fig. 17 f C V = 0V Input Capacitance 3890 GS iss V = 13V C Output Capacitance 1110 pF DS oss C = 1.0MHz Reverse Transfer Capacitance 490 rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I MOSFET symbol Continuous Source Current S 112 showing the (Body Diode) A I Pulsed Source Current integral reverse SM 234 p-n junction diode. (Body Diode) T = 25C, I = 23A, V = 0V V Diode Forward Voltage 1.0 V J S GS SD t T = 25C, I = 23A Reverse Recovery Time 26 39 ns rr J F Q Reverse Recovery Charge 36 54 nC di/dt = 200A/s rr Pulse width 400s duty cycle 2% 2 www.irf.com