IRF6646PbF IRF6646TRPbF DirectFET Power MOSFET RoHs Compliant R V V DS(on) DSS GS Lead-Free (Qualified up to 260C Reflow) 7.6m 10V 80V max 20V max Application Specific MOSFETs Q Q Q Q Q V Ideal for High Performance Isolated Converter g tot gd gs2 rr oss gs(th) Primary Switch Socket 36nC 12nC 2.0nC 48nC 18nC 3.8V Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MN Description TM The IRF6646PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6646PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(10%) or 36V to 60V ETSI input voltage range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 80 V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 12 I T = 25C A GS D I T = 70C Continuous Drain Current, V 10V 9.6 A GS D A Continuous Drain Current, V 10V 68 I T = 25C C GS D Pulsed Drain Current 96 I DM E Single Pulse Avalanche Energy 230 mJ AS I 7.2 Avalanche Current A AR 0.05 12.0 I = 7.2A I = 7.2A D D V = 40V DS 10.0 0.04 V = 16V DS 8.0 0.03 6.0 0.02 T = 125C 4.0 J 0.01 2.0 T = 25C J 0 0.0 4 6 8 10 12 14 16 0 10203040 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 2. Typical Total Gate Charge vs. Gate-to-Source Fig 1. Typical On-Resistance vs. Gate Voltage Voltage Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Click on this section to link to the DirectFET Website. Repetitive rating pulse width limited by max. junction temperature. Surface mounted on 1 in. square Cu board, steady state. Starting T = 25C, L = 8.8mH, R = 25, I = 7.2A. J G AS www.irf.com 1 08/24/06 Typical R () DS(on) V , Gate-to-S ource Voltage (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 80 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.10 V/C D DSS J R V = 10V, I = 12A Static Drain-to-Source On-Resistance 7.6 9.5 m DS(on) GS D V V = V , I = 150A Gate Threshold Voltage 3.0 4.9 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -11 mV/C GS(th) J I V = 80V, V = 0V Drain-to-Source Leakage Current 20 A DS GS DSS V = 64V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 7.2A gfs Forward Transconductance 17 S DS D Q Total Gate Charge 36 50 g V = 40V Q Pre-Vth Gate-to-Source Charge 7.6 gs1 DS Q V = 10V Post-Vth Gate-to-Source Charge 2.0 nC GS gs2 I = 7.2A Q Gate-to-Drain Charge 12 gd D Q Gate Charge Overdrive 14 See Fig. 15 godr Q Switch Charge (Q + Q ) 14 sw gs2 gd Q V = 16V, V = 0V Output Charge 18 nC DS GS oss R Gate Resistance 1.0 G t V = 40V, V = 10V Turn-On Delay Time 17 DD GS d(on) I = 7.2A t Rise Time 20 D r t R =6.2 Turn-Off Delay Time 31 ns d(off) G t See Fig. 16 & 17 Fall Time 12 f V = 0V C Input Capacitance 2060 iss GS C V = 25V Output Capacitance 480 pF DS oss C Reverse Transfer Capacitance 120 = 1.0MHz rss C V = 0V, V = 1.0V, f=1.0MHz Output Capacitance 2180 GS DS oss V = 0V, V = 64V, f=1.0MHz C Output Capacitance 310 oss GS DS Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current 2.5 MOSFET symbol S (Body Diode) A showing the I integral reverse Pulsed Source Current 96 SM (Body Diode) p-n junction diode. V T = 25C, I = 7.2A, V = 0V Diode Forward Voltage 1.3 V J S GS SD T = 25C, I = 7.2A, V = 40V t Reverse Recovery Time 36 54 ns rr J F DD Q di/dt = 100A/s See Fig. 18 Reverse Recovery Charge 48 72 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. Thermally limited and used R to calculate. ja 2 www.irf.com