IRF820 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating TO-220AB Repetitive avalanche rated Available Fast switching G Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance S D please see www.vishay.com/doc 99912 G S Note N-Channel MOSFET * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY DESCRIPTION V (V) 500 DS R ()V = 10 V 3.0 DS(on) GS Third generation power MOSFETs from Vishay provide the Q max. (nC) 24 designer with the best combination of fast switching, g ruggedized device design, low on-resistance and Q (nC) 3.3 gs cost-effectiveness. Q (nC) 13 gd The TO-220AB package is universally preferred fo r Configuration Single commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF820PbF Lead (Pb)-free and halogen-free IRF820PbF-BE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 20 GS T = 25 C 2.5 C Continuous drain current V at 10 V I GS D T = 100 C 1.6 A C a Pulsed drain current I 8.0 DM Linear derating factor 0.40 W/C b Single pulse avalanche energy E 210 mJ AS a Repetitive avalanche current I 2.5 A AR a Repetitive avalanche energy E 5.0 mJ AR Maximum power dissipation T = 25 C P 50 W C D c Peak diode recovery dV/dt dV/dt 3.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 60 mH, R = 25 , I = 2.5 A (see fig. 12) DD J g AS c. I 2.5 A, dI/dt 50 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0852-Rev. D, 16-Aug-2021 Document Number: 91059 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF820 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -2.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 1.5 A -- 3.0 DS(on) GS D Forward transconductance g V = 50 V, I = 1.5 A 1.5 - - S fs DS D Dynamic Input capacitance C - 360 - iss V = 0 V, GS Output capacitance C -9V = 25 V, 2- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -37- rss Total gate charge Q -- 24 g I = 2.1 A, V = 400 V, D DS Gate-source charge Q --V = 10 V 3.3 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --13 gd Turn-on delay time t -8.0 - d(on) Rise time t -8.6 - r V = 250 V, I = 2.1 A, DD D ns b R = 18 , R = 100 , see fig. 10 g D Turn-off delay time t -33- d(off) Fall time t -16- f Gate input resistance R f = 1 MHz, open drain 1.8 - 12.6 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 2.5 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 8.0 SM S b Body diode voltage V T = 25 C, I = 2.5 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 260 520 ns rr T = 25 C, I = 2.1 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.7 1.4 nC rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0852-Rev. D, 16-Aug-2021 Document Number: 91059 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000